Zobrazeno 1 - 10
of 20
pro vyhledávání: '"S. Kosslowski"'
Autor:
M. Berg, D. Kother, B. Hopf, Hans L. Hartnagel, B.E. Maile, J. Dickmann, T. Hackbarth, S. Kosslowski
Publikováno v:
Proceedings of 8th International Conference on Indium Phosphide and Related Materials.
An active coplanar circulator for Q-band operation based on lattice matched InAlAs/InGaAs/InP HFETs has been designed and fabricated. The active devices have a gate-width of W/sub G/=6/spl times/20 /spl mu/m and T-gates with a gate-length of L/sub G/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d331649a35164c4dcea58afa3175225
https://doi.org/10.1109/iciprm.1996.491936
https://doi.org/10.1109/iciprm.1996.491936
Autor:
Claudio Paoloni, S. Kosslowski
Publikováno v:
[1991] Proceedings of the 34th Midwest Symposium on Circuits and Systems.
The approach to the design of traveling wave amplifiers (TWAs) presented makes use of specially selected FETs. This is due to the introduction of Chebyshev or Butterworth filter theory that requires different capacitances for the individual stages. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::063cfdd47e0be99370006c02e52e29d2
https://doi.org/10.1109/mwscas.1991.252185
https://doi.org/10.1109/mwscas.1991.252185
Publikováno v:
1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192).
Mixer diodes in SIMMWIC (silicon millimeter wave integrated circuit) technology with barrier height reducing n/sup +/ cap layers and SiGe top layers are investigated. The standard Mott diode with Ti-metallization has a barrier height of 0.5 V. By int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d00184c18f83df1fc373c44525ad6a8
https://doi.org/10.1109/mwsym.1998.700705
https://doi.org/10.1109/mwsym.1998.700705
Publikováno v:
Proceedings of 1995 IEEE MTT-S International Microwave Symposium.
Circulators can be used to separate transmit/receive (T/R) signals and for two-port tuners. Conventional ferrite devices are not applicable for MMICs. Two new types of electronic circulators are presented in this paper covering the frequency range fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ac273081b494b088533a6ded6b885ab
https://doi.org/10.1109/mwsym.1995.405907
https://doi.org/10.1109/mwsym.1995.405907
Autor:
B.E. Maile, S. Kosslowski, P. Narozny, Ingo Wolff, A. Schurr, H. Haspeklo, C. Wolk, H. Dambkes, Jurgen Dickmann, A. Geyer
Publikováno v:
1993 23rd European Microwave Conference.
This paper demonstrates a comparison of two three-stage Ka-Band amplifiers in CPW-technique. The first MMIC is based on AlGaAs/GaAs HEMT devices with a gate length of 0.25?m. The second MMIC is realized with 0.25?m InAlAs/InGaAs HEMT devices on InP.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dead079b968ad7a45aab9abe3ff6d76
https://doi.org/10.1109/euma.1993.336824
https://doi.org/10.1109/euma.1993.336824
Publikováno v:
20th European Microwave Conference, 1990.
This paper introduces a new noise analysis algorithm, which is perfectly suited for linear and nonlinear applications. The adjoint system method is extended to compute the noise correlation matrix of multiport networks with arbitrary topology. The al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b511857cc269c68fb7cd7cf5223edc8b
https://doi.org/10.1109/euma.1990.336183
https://doi.org/10.1109/euma.1990.336183
Autor:
S. Heuthe, H. Haspeklo, J. Bottcher, K. Riepe, A. Schurr, H. Daembkes, S. Kosslowski, H. Kunzel, B.E. Maile, A. Geyer, J. Dickmann
Publikováno v:
Electronics Letters. 29:493
A three stage 28 GHz InP MMIC coplanar waveguide amplifier with 27 dB gain over the frequency band from 26 to 32 GHz has been developed. The circuit is fully passivated with Si/sub 3/N/sub 4/ and includes all necessary elements for input/output match
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3b2a32fb271b9fba4a32e089455c6b9
https://doi.org/10.1049/el:19930330
https://doi.org/10.1049/el:19930330
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 36:1265-1271
The characteristics of a shielded microstrip line with finite metallization thickness are calculated using the point matching method (PMM). The advantage in this case is that the method does not depend on a special geometry of the strip metallization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36ada78f1e14e65b7b66402de5da9c5f
https://doi.org/10.1109/22.3668
https://doi.org/10.1109/22.3668
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