Zobrazeno 1 - 10
of 65
pro vyhledávání: '"S. Kolberg"'
Publikováno v:
Hydrology and Earth System Sciences, Vol 10, Iss 3, Pp 369-381 (2006)
A method for assimilating remotely sensed snow covered area (SCA) into the snow subroutine of a grid distributed precipitation-runoff model (PRM) is presented. The PRM is assumed to simulate the snow state in each grid cell by a snow depletion curve
Externí odkaz:
https://doaj.org/article/18716dc7ad34445db86f1a9c6aa4f5de
Autor:
Osmar D. Prestes, Michele A. Presta, Diana I. S. Kolberg, Renato Zanella, Simone B. Rossato, Neidi G. Penna, Luisa H. R. Hecktheuer
Publikováno v:
Química Nova, Vol 30, Iss 1, Pp 18-21 (2007)
A rapid and efficient method for the analysis of histamine in wines using HPLC with fluorescence detection after derivatization was developed and validated. The method LOD and LOQ values were 0.25 and 0.50 mg L-1 respectively. The repeatability and i
Externí odkaz:
https://doaj.org/article/ef63306be96b4845b270481ed3fc3e84
Autor:
Joy V. Browne, Kathleen J. S. Kolberg
Publikováno v:
Neonatology Today. 16:38-39
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9c60d1f95780fa538873fff0535efb3
https://doi.org/10.51362/neonatology.today/202116123839
https://doi.org/10.51362/neonatology.today/202116123839
Publikováno v:
Mathematics and Computers in Simulation. 79:1107-1115
Models for short-channel DG and GAA MOSFETs are presented. In the subthreshold regime, the electrostatics of the device is dominated by the capacitive coupling between the electrodes, which is analyzed by conformal mapping techniques. In the strong i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da50f7ade9cec73e6fc2588258ac40f2
https://doi.org/10.1016/j.matcom.2007.09.011
https://doi.org/10.1016/j.matcom.2007.09.011
Publikováno v:
physica status solidi c. 5:3609-3612
We present a 2D physics based compact model of the double gate (DG) and the gate-all-around (GAA) MOSFET, with emphasis on short-channel devices of nano-scale dimensions. The compact model is based on a preprocessing routine based on a self-consisten
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e2e108cf2120033df9d573b4af90c08
https://doi.org/10.1002/pssc.200880125
https://doi.org/10.1002/pssc.200880125
Publikováno v:
IEEE Transactions on Electron Devices. 55:2678-2686
A precise modeling framework for short-channel nanoscale double-gate (DG) and gate-all-around (GAA) MOSFETs is presented. For the DG MOSFET, the modeling is based on a conformal mapping analysis of the potential distribution in the device body arisin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b9807f642a1acad6ecfe771a21ed960
https://doi.org/10.1109/ted.2008.2003221
https://doi.org/10.1109/ted.2008.2003221
Publikováno v:
Solid-State Electronics. 52:1486-1490
We present 2-D physics based modeling of short-channel double-gate MOSFETs of nanoscale dimensions. We have derived a precise, self-consistent framework model for the device electrostatics, the drain current, and the charge conserving capacitances, c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc4e56ba145d1c806d2568d51d91c216
https://doi.org/10.1016/j.sse.2008.06.022
https://doi.org/10.1016/j.sse.2008.06.022
Publikováno v:
Journal of Perinatology. 26:S38-S48
To explore the implications of the single family room (SFR) care environment of neonatal intensive care units (NICU) compared to Open-bay, Combination and Double-occupancy configurations, focusing on family experience, neonate outcomes, staff percept
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::feb016248009ed3083785b8135319e21
https://doi.org/10.1038/sj.jp.7211583
https://doi.org/10.1038/sj.jp.7211583
Autor:
Tor A. Fjeldly, S. Kolberg
Publikováno v:
Physica Scripta. :57-60
This paper presents important issues related to the two-dimensional (2D) modelling of nanoscale, fully depleted double-gate silicon-on-insulator (SOI) MOSFETs in subthreshold and near-threshold operation. The modelling is based on the solution of Lap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::576fd7fefbe50985800e6c35520b9316
https://doi.org/10.1088/0031-8949/2006/t126/013
https://doi.org/10.1088/0031-8949/2006/t126/013
Autor:
S. Kolberg, Tor A. Fjeldly
Publikováno v:
Journal of Computational Electronics. 5:217-222
We have developed a 2D model for double-gate SOI MOSFET based on a solution of the Laplacian for the device body utilizing conformal mapping techniques. The model yields explicit expressions for the subthreshold and near-threshold electrostatics of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f357f219cfef67966454bf5c87dca47
https://doi.org/10.1007/s10825-006-8847-9
https://doi.org/10.1007/s10825-006-8847-9