Výsledky vyhledávání - "S. Klingbeil"

150 mm RF GaN Technology for Commercial RF Applications (Invited)

Autor: J. Wan, K. Kim, F. Vanaverbeke, B. Green, C. Gaw, P. Renaud, S. Klingbeil, J. Finder, K. Moore, C. Ramplev, C. Zhu, D. Burdeaux, T. Amold, D. Hill

Publikováno v: 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

Gallium nitride (GaN) has taken a dominant role in high power, high frequency applications. The material properties of GaN enable high power density, high efficiency, and high gain operation. NXP's GaN technology fully harnesses these inherent GaN pe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7c79c3124428f7b3a38bdddc8eb226ba
https://doi.org/10.1109/edtm50988.2021.9420945

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High Performance 150 mm RF GaN Technology with Low Memory Effects

Autor: C. Rampley, K. Kim, D. Hill, P. Renaud, K. Moore, J. Wan, C. Gaw, S. Klingbeil, R. Embar, Peter Rashev, T. Arnold, B. Green, C. Zhu, Mir Masood, F. Vanaverbeke, J. Finder, D. Burdeaux

Publikováno v: BCICTS

Gallium nitride (GaN) heterostructure field effect transistor (HFET) technology is rapidly becoming the solution of choice for a variety of infrastructure applications for 4G and beyond. In response to this rapidly increasing demand, NXP has develope

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2227acfaea8a7a0e3f1625a6a4f9a06b
https://doi.org/10.1109/bcicts48439.2020.9392951

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Akademický článek

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Akademický článek

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A high power density 26 V GaAs pHEMT technology

Autor: D. Maurer, Ellen Lan, E.M. Johnson, P. Fisher, Charles E. Weitzel, P. Li, C.A. Gaw, J. Kim, M. Miller, B.M. Green, Lawrence S. Klingbeil, B. Knappenberger, M. CdeBaca, O. Hartin

Publikováno v: 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).

This report presents a GaAs pHEMT technology optimized for 26 V drain bias. At this bias, a 2.14 GHz gate width scaling study demonstrates output power densities of 1.8-2.1 W/mm of output power at 1 dB gain compression (P/sub 1dB/) for device sizes r

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::30dcfb83553c815e1929fcab4e22a827
https://doi.org/10.1109/mwsym.2004.1339090

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A Proposed Framework for Network-Centric Maritime Warfare Analysis

Autor: Ralph S. Klingbeil, Keith M. Sullivan

The benefits of network-centric warfare are addressed in many publications, but few of these publications actually demonstrate how to quantify these alleged benefits. This report proposes an analytical framework to quantify the value-added of network

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::45b3fe595c1540a87da267945d0301c0
https://doi.org/10.21236/ada416829

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Dual-band multi-mode power amplifier module using a third generation HBT technology

Publikováno v: GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191).

A heterojunction bipolar transistor (HBT) technology utilizing InGaP/GaAs and carbon-doped base has been established in Motorola's high-volume 6" GaAs facility. The technology has been used to develop an integrated dual band (824-849 MHz and 1850-191

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0c61013b6e1f774edb45fff3762a853a
https://doi.org/10.1109/gaas.2001.964349

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