Zobrazeno 1 - 10
of 54
pro vyhledávání: '"S. Kishimura"'
Autor:
Shunsuke Isono, Tetsuo Satake, Shuji Hirao, Tetsuya Ueda, Takashi Hyakushima, Kenji Taki, Makoto Tsutsue, R. Sakaida, Kotaro Nomura, S. Kishimura, Naoki Torazawa
Publikováno v:
2013 IEEE International Interconnect Technology Conference - IITC.
A stacked image sensor with a 0.9 μm pixel size fabricated by using organic photoconductive film (OPF) was realized. It is the first trial to introduce an active material, that is, an organic semiconductor into the BEOL process. This pixel structure
Publikováno v:
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).
For 65-nm node devices, we have systematically investigated the lithographic margin of electron-beam projection lithography (EPL), ArF lithography and vacuum ultraviolet (VUV) lithography. Among them, EPL has sufficient margin and excellent pattern f
Autor:
Y. Hayashide, M. Asakura, T. Katayama, A. Yoshida, Tsuyoshi Horikawa, Teruo Shibano, K. Sato, Hiroshi Kimura, T. Maruyama, S. Kishimura, Y. Ohno, T. Nishimura, H. Sumitani, K. Moriizumi, K. Namba, Hirokazu Miyoshi, H. Itoh, Shin'ichi Satoh, Takahisa Eimori, J. Matsufusa
Publikováno v:
Proceedings of IEEE International Electron Devices Meeting.
Thin film of (Ba/sub 0.75/Sr/sub 0.25/)TiO/sub 3/ with equivalent SiO/sub 2/ thickness of 0.47 nm has been developed for capacitor dielectric film of 256 Mbit DRAM. A novel cell design named FOGOS (FOlded Global and Open Segment bit-line cell) struct
Publikováno v:
2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184).
A new high-performance resist for F/sub 2/ laser (157 nm) VUV (vacuum ultraviolet) lithography has been developed. The resist polymers consist of fluorinated-alicyclic methacrylate (MA), fluorinated-alkyl MA, acid labile unit, etch-resistant unit and
Publikováno v:
Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135).
Publikováno v:
Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135).
Autor:
S. Mori, T. Morisawa, N. Matsuzawa, Y. Kaimoto, M. Endo, T. Matsuo, M. Takahashi, T. Naito, Y. Naruse, S. Kishimura, S. Takechi, A. Yamaguchi, M. Uematsu, T. Onodera, K. Nakazawa, K. Kamon, T. Tatsumi, S. Morishita, K. Kuhara, T. Ohfuji, T. Ogawa, H. Ohtsuka, M. Inoue, M. Sasago
Publikováno v:
International Electron Devices Meeting. IEDM Technical Digest.
Summary form only given. Although ArF excimer laser lithography is expected to attain the highest resolution possible in optical lithography, its application to 0.13-/spl mu/m devices has not been adequately demonstrated. In next generation sub-0.10
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 14:4234
The process of removing an overcoat (OC) on the tert‐butoxycarbonyl (t‐BOC) type chemically amplified positive resists has been studied, and it has been found that in the case of removing the OC after postexposure bake (PEB), or at development, t
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Akademický článek
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