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Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements

Autor: D Montero, D Caudevilla, S Algaidy, R Garcia-Hernansanz, A Suler, P Acosta-Alba, S Kerdiles, D Pastor, E Garcia-Hemme, F Roy, J Olea

Publikováno v: Semiconductor Science and Technology. 38:034002

Hyperdoped or supersaturated semiconductors are gathering the attention of industry and research institutions due to their sub-bandgap photon absorption properties. In this study, two fast and non-invasive techniques, time-resolved reflectometry (TRR

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f89d11cea96000badb4890c313dcbd0b
https://doi.org/10.1088/1361-6641/acb16d

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3D sequential integration: applications and associated key enabling modules (design & technology)

Publikováno v: 2021 IEEE International Electron Devices Meeting (IEDM).

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a954addef7e27e3dfae349b36fd38937
https://doi.org/10.1109/iedm19574.2021.9720671

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Extending thermal stability of short-living soliton states in silicon nitride microring resonators

Autor: D. Grassani, H. El Dirani, F. A. Sabattoli, L. Youssef, C. Petit-Etienne, S. Kerdiles, E. Pargon, M. Liscidini, C. Sciancalepore, D. Bajoni, M. Galli

Publikováno v: Optics Continuum
Optics Continuum, 2022, 1 (7), pp.1516. ⟨10.1364/OPTCON.455403⟩

Dissipative Kerr solitons in microresonators enable on-chip chip generation of low-noise optical pulse trains with high repetition rates, finding applications in optical communication, distance measurement, spectroscopy and radiofrequency generation.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f599047a112dde0598b938056d6f67bb
https://doi.org/10.1364/optcon.455403

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IMPACT OF NANOSECOND LASER ENERGY DENSITY ON THE C40-TiSi2 FORMATION AND C54-TiSi2 TRANSFORMATION TEMPERATURE

Autor: Magali Gregoire, Dominique Mangelinck, S. Kerdiles, K. Dabertrand, P. Benigni, Laura Esposito, Jean-Gabriel Mattei

Publikováno v: Journal of Applied Physics
Journal of Applied Physics, 2020, 128 (8), pp.085305. ⟨10.1063/5.0016091⟩
Journal of Applied Physics, American Institute of Physics, 2020, 128 (8), pp.085305. ⟨10.1063/5.0016091⟩

International audience; The formation of Ti based contacts in new image sensors CMOS technologies is limited by the requirement of low thermal budget. The objectives for these new 3D-technologies are to promote ohmic, low resistance, repeatable and r

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b594fcad0cf7b0d9d2d25fc02e7fd7b
https://hal.science/hal-02922876

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