Zobrazeno 1 - 10
of 106
pro vyhledávání: '"S. Kaschieva"'
Autor:
Diana Nesheva, Maja Šćepanović, S. Kaschieva, Benjamin Kalas, T. Hristova-Vasileva, Zsolt Fogarassy, Krassimira Antonova, Peter Petrik, Sergei N. Dmitriev
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 458:159-163
Homogeneous films from SiOx (x = 1.2, 1.3) were deposited on crystalline Si substrates by thermal evaporation of silicon monoxide in vacuum. A part of the films was further annealed at 1000 °C to grow Si nanocrystals in a silicon dioxide matrix. Hom
Autor:
Sergey N. Dmitriev, S. Kaschieva
Publikováno v:
Ion Implantation-Research and Application
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76ddb8724c1eb923457979cf8482857e
https://doi.org/10.5772/67761
https://doi.org/10.5772/67761
Autor:
Diana Nesheva, T. Hristova-Vasileva, S. Kaschieva, Krassimira Antonova, Peter Petrik, Sergei N. Dmitriev, János L. Lábár, Zsolt Fogarassy
Publikováno v:
Journal of Applied Physics. 123:195303
Homogeneous films from SiO1.3 (250 nm thick) were deposited on crystalline Si substrates by thermal evaporation of silicon monoxide. A part of the films was further annealed at 700 °C to grow amorphous Si (a-Si) nanoclusters in an oxide matrix, thus
Publikováno v:
Journal of Physics: Conference Series. 992:012059
Publikováno v:
Physics of the Solid State. 51:2241-2246
Nanosized heterostructures n-Si/SiO2 with different thicknesses of the oxide film (20, 500 nm) after implantation by Si+ ions with energies of 12 and 150 keV have been investigated using Si L2, 3 X-ray emission spectroscopy (the Si 3d3s → Si 2p1/2,
Formation and electron-beam annealing of implantation defects in a thin-film Si-SiO2 heterostructure
Publikováno v:
Technical Physics. 54:323-326
The radiation-induced defects in a 20-nm-thick SiO2 film on a silicon wafer are studied by optically stimulated electron emission. Accelerated (12-keV) silicon ions is found to generate various oxygen-deficient centers, among which E′-type defects
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 266:5027-5031
Defects induced by high-energy electrons in Si–SiO 2 structure have been studied by the optically stimulated electron emission (OSEE) method. Si–SiO 2 structures with oxide thickness of 100 nm are irradiated with 23 MeV electrons for different du
Autor:
S. N. Dmitriev, S. Kaschieva
Publikováno v:
Applied Physics A. 94:257-261
The influence of MeV electron irradiation on the interface states of argon implanted thin oxide MOS samples has been studied by the thermally stimulated current (TSC) method. The oxide thickness of the structures is 18 nm. Two groups of n-type MOS st
Publikováno v:
The European Physical Journal B. 52:355-359
The influence of high energy electron (23 MeV) irradiation on the electrical characteristics of p-channel polysilicon thin film transistors (PSTFTs) was studied. The channel 220 nm thick LPCVD (low pressure chemical vapor deposition) deposited polysi
Publikováno v:
Plasma Processes and Polymers. 3:233-236
The influence of high-energy electron irradiation on the redistribution of silicon and oxygen atoms in implanted Si-SiO 2 structures has been investigated by Rutherford backscattering spectroscopy (RBS). Two groups of Si-SiO 2 samples implanted with