Zobrazeno 1 - 2
of 2
pro vyhledávání: '"S. K. Paprotskii"'
Autor:
V. G. Ralchenko, Roman A. Khmelnitskii, N. B. Rodionov, S. K. Paprotskii, Miron S. Kagan, Andrey Bolshakov, I. V. Altukhov, N. A. Khval’kovskii
Publikováno v:
Journal of Communications Technology and Electronics. 65:1336-1338
The conductivity of epitaxial diamond films lightly doped with boron has been studied at strong electric fields up to ~5 × 105 V/ cm. It is shown that field ionization of boron acceptors in diamond at room temperature, because of the low concentrati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b6bd724c11dd756080b44a51dac576e
https://doi.org/10.1134/s1064226920110029
https://doi.org/10.1134/s1064226920110029
Autor:
A. P. Zelenyi, S. K. Paprotskii, E. A. Il’ichev, A. V. Verkhovtseva, N. M. Gorshkova, I. V. Altukhov, V. A. Gergel, V. S. Minkin, G. B. Galiev
Publikováno v:
Technical Physics. 60:1027-1030
A simplified theoretical description of electrical instability under thermal injection in multibarrier heterostructures is given in terms of internal positive feedback in each elementary unit of the hetero-object. In the simplest case, which is a seq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac496aab190220f8439946f4f6a689e3
https://doi.org/10.1134/s1063784215070129
https://doi.org/10.1134/s1063784215070129