Zobrazeno 1 - 10
of 61
pro vyhledávání: '"S. K. Lyubutin"'
Publikováno v:
Instruments and Experimental Techniques. 60:545-550
The operation of a thyristor switch triggered in the impact-ionization wave mode was investigated. The switch contained two series-connected Т253-800-24 thyristors of the tablet design with a semiconductor- structure diameter of 56 mm. When a trigge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2e010bfa0beef1996e16d47b19b5948
https://doi.org/10.1134/s0020441217030204
https://doi.org/10.1134/s0020441217030204
Autor:
A. I. Gusev, S. K. Lyubutin, B.G. Slovikovsky, Viliam Senaj, Thomas Kramer, Michael Barnes, V. Patrakov, S. Rukin
Publikováno v:
2019 IEEE Pulsed Power & Plasma Science (PPPS).
GTO like thyristors, comprising of highly interdigitated gate and cathode structure, similarly to a GTO, are used at CERN as a main switching component of LHC Beam Dumping System (LBDS). These devices, the 5STH-20H450002 (4.5 kV, 80 kA, 18 kA/µs), w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::922ea46d83fad6241483762d31c0ca42
https://doi.org/10.1109/ppps34859.2019.9009695
https://doi.org/10.1109/ppps34859.2019.9009695
Publikováno v:
IEEE Transactions on Plasma Science. 44:1888-1893
The process of triggering thyristors by an overvoltage pulse with a short rise time was investigated. Low-frequency commercial thyristors of tablet design with diameters of silicon wafers of 32–56 mm and an operating voltage of 2–2.4 kV dc were u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6188b41c6bd9a9441d51b53be1b3120e
https://doi.org/10.1109/tps.2016.2542343
https://doi.org/10.1109/tps.2016.2542343
Publikováno v:
Semiconductors. 50:394-403
High-power thyristor switching from the blocking to conducting state via an overvoltage pulse with nanosecond rise time is studied. Low-frequency tablet thyristors with an operating voltage of 2 kV are used in the experiments. An external pulse provi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ea9bb209021a262e7d4378d3596f2b2
https://doi.org/10.1134/s1063782616030106
https://doi.org/10.1134/s1063782616030106
Publikováno v:
2018 IEEE International Power Modulator and High Voltage Conference (IPMHVC).
The paper describes the investigation of fast thyristor-based switches operating as a primary switch in nanosecond pulse generators with a semiconductor opening switch (SOS). Commercially available thyristors with the diameter of the silicon wafer of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14d5beba76c2e2c6409c2ee08d9f128f
https://doi.org/10.1109/ipmhvc.2018.8936826
https://doi.org/10.1109/ipmhvc.2018.8936826
Publikováno v:
Instruments and Experimental Techniques. 58:376-380
The possibility of triggering thyristors by an overvoltage pulse with a short rise time was investigated. Low-frequency thyristors of pellet design with diameters of semiconductor structures of 32 and 40 mm and an operating voltage of 2 kV were used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::697da00c6ab600a129e495478619a79d
https://doi.org/10.1134/s0020441215020189
https://doi.org/10.1134/s0020441215020189
Publikováno v:
2017 IEEE 21st International Conference on Pulsed Power (PPC).
Operation of the thyristor-based switches triggered in impact-ionization wave mode has been investigated. The thyristor switch contained two series connected tablet thyristors having a silicon wafer of 56 mm in diameter. At applying across the switch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4b7512d4c86c76ace5d679339f73058
https://doi.org/10.1109/ppc.2017.8291162
https://doi.org/10.1109/ppc.2017.8291162
Publikováno v:
Semiconductors. 48:1067-1078
A silicon closing switch with successive breakdown mode of diode structures based on a superfast ionization front is studied. In a coaxial line with a 48-Ω wave impedance, pulses with an amplitude above 100 kV and a rise time of 40 ps at an amplitud
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc8e52fd2f0ca038c28faa28dcc3784a
https://doi.org/10.1134/s1063782614080132
https://doi.org/10.1134/s1063782614080132
Autor:
Thomas Kramer, S. Rukin, A. I. Gusev, B.G. Slovikovsky, Viliam Senaj, S. K. Lyubutin, V. Patrakov, Michael Barnes
Publikováno v:
Journal of Instrumentation
GTO-like thyristors 5STH-2045H0002 (4.5 kV, 18 kA/us) developed by ABB semiconductors are currently used at CERN in LHC Beam Dumping System (LBDS): high-power switches with high dI/dt capability and low turn-on delay time are required. Implementation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::882f838ea6e70e68c96b3a8e27fede59
https://doi.org/10.1088/1748-0221/14/10/p10006
https://doi.org/10.1088/1748-0221/14/10/p10006
Publikováno v:
2016 IEEE International Power Modulator and High Voltage Conference (IPMHVC).
Commercial thyristors of tablet design with diameters of silicon wafers of 40 to 56 mm and an operating voltage of 2 to 2.4 kV DC were triggered by an external overvoltage pulse applied across the thyristor main electrodes. In experiments a voltage r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5beab6f46e30551c059c2a159e174b8d
https://doi.org/10.1109/ipmhvc.2016.8012917
https://doi.org/10.1109/ipmhvc.2016.8012917