Zobrazeno 1 - 5
of 5
pro vyhledávání: '"S. K. Kurinec"'
Autor:
R. Krom, D. J. Pawlik, S. Muhkerjee, S. Pandharpure, S. K. Kurinec, S-Y. Park, R. Yu, R. Anisha, P. R. Berger, P. E. Thompson, S. L. Rommel
Publikováno v:
2007 International Semiconductor Device Research Symposium.
This study reports a Si RITD whose characteristics improve with increasing anneal time, resulting in a peak current density (JP) and PVCR up to 2.97 kA/cm2 and 3.08, respectively.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16ae19b91e6660ff0d07f8335cf122a5
https://doi.org/10.1109/isdrs.2007.4422468
https://doi.org/10.1109/isdrs.2007.4422468
Publikováno v:
Proceedings., Eighth University/Government/Industry Microelectronics Symposium.
The most appealing technique for contactless testing of the integrated circuit die has been determined to be through the use of optical signals in the visible or infrared region to supply test signals to and from the integrated circuit chip. The gene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68b21d69ae67efb6c93d52d8dde6d62c
https://doi.org/10.1109/ugim.1989.37306
https://doi.org/10.1109/ugim.1989.37306
Publikováno v:
[1989] Proceedings. The Twenty-First Southeastern Symposium on System Theory.
Light-emission properties of a reverse-biased silicon diode under avalanche breakdown are investigated for optical interconnections for VLSI systems. Silicon, being an indirect bandgap semiconductor, is a poor material for light emission from forward
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90d1a90b94743f7162652f096809713a
https://doi.org/10.1109/ssst.1989.72553
https://doi.org/10.1109/ssst.1989.72553
Publikováno v:
Thin Solid Films. 162:247-255
Morphology changes and oxide formation for 100 nm gold films over 60 nm nickel films deposited on SiO2 (300 nm of SiO2 on silicon wafers) have been studied in ambients of H2, O2, air, N2, helium and argon temperatures between 250 and 500°C and times
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1f66a4eedee4b1eb0d5fc2a48cedc94
https://doi.org/10.1016/0040-6090(88)90212-x
https://doi.org/10.1016/0040-6090(88)90212-x
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 5:337-342
Thin films of Ni covered with Au and supported on oxidized silicon wafers were deposited by thermal evaporation or electron beam evaporation. After heating in oxidizing environments from 250 to 400 °C, porosity was observed in the Au films. The pore
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90d9ec6097d25bb89f9156c3e235fb1f
https://doi.org/10.1116/1.574156
https://doi.org/10.1116/1.574156