Zobrazeno 1 - 1
of 1
pro vyhledávání: '"S. K L. C. Goh"'
Autor:
H. Yoon, Vinayak Bharat Naik, J. Kwon, K. Yamane, L. Pu, J. H. Lim, S. T. Woo, O. Kallensee, J. Hwang, Y. S. You, S. Ong, Jeff J. Xu, L. Zhang, Tae Young Lee, S. H. Jang, S. K L. C. Goh, F. Tan, Eng Huat Toh, D. Zeng, N. Balasankaran, Soh Yun Siah, Hemant Dixit, T. H. Chan, N. L. Chung, R. Low, G. Congedo, R. Chao, Y. Otani, Johannes Mueller, C.G. Lee, T. Merbeth, J. W. Ting, L. Y. Hau, K. W. Gan, Y. Huang, A. Vogel, E. Quek, C. Chiang, Behtash Behin-Aein, W. P. Neo, T. Ling, V. Kriegerstein, Chim Seng Seet, Jen Shuang Wong, B. Pfefferling
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We demonstrate highly reliable and mass-production ready 22nm FD-SOI 40Mb embedded-MRAM for industrial-grade (-40~125°C) applications. This technology having 5x solder reflows compatibility stack has passed JEDEC standard qualification (ECC-OFF) wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2297be3b6e345d353ce3138acd58f0cd
https://doi.org/10.1109/iedm13553.2020.9371935
https://doi.org/10.1109/iedm13553.2020.9371935
