Zobrazeno 1 - 10
of 62
pro vyhledávání: '"S. Jouan"'
Autor:
Bastien Mamdy, Bruce Rae, Dominique Golanski, C. Lapeyre, A. Pingault, Sara Pellegrini, S. Jouan
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
We present the first mature SPAD device in advanced 40 nm technology. For the first time we also show dedicated microlens fabrication on top of SPADs integrated in the same technology node. A high fill factor >70% is reported together with a low DCR
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::354738c588a03e2186f08e8da014cedb
https://doi.org/10.1109/iedm.2017.8268404
https://doi.org/10.1109/iedm.2017.8268404
Akademický článek
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Autor:
Annie L'Helgoualc'h, Michel Samson, Marie-Thérèse Dimanche-Boitrel, Muhammad Imran Arshad, Catherine Lucas-Clerc, Aveline Filliol, S. Jouan-Lanhouet, Claire Piquet-Pellorce
Publikováno v:
Journal of Molecular Medicine
Journal of Molecular Medicine, Springer Verlag, 2015, 93 (8), pp.867-878. ⟨10.1007/s00109-015-1270-6⟩
Journal of Molecular Medicine, 2015, 93 (8), pp.867-878. ⟨10.1007/s00109-015-1270-6⟩
Journal of Molecular Medicine, Springer Verlag, 2015, 93 (8), pp.867-878. ⟨10.1007/s00109-015-1270-6⟩
Journal of Molecular Medicine, 2015, 93 (8), pp.867-878. ⟨10.1007/s00109-015-1270-6⟩
Interleukin-33 (IL-33), a cytokine belonging to the IL-1 family, is crucially involved in inflammatory pathologies including liver injury and linked to various modes of cell death. However, a link between IL-33 and necroptosis or programmed necrosis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0fa5a73be0b7b18ec41234cbd3abb565
https://hal-univ-rennes1.archives-ouvertes.fr/hal-01134319
https://hal-univ-rennes1.archives-ouvertes.fr/hal-01134319
Autor:
A. Monroy, C. Fellous, Michel Marty, H. Baudry, P. Ribot, Damien Lenoble, S. Jouan, A. Perrotin, M. Laurens, Alain Chantre, Grégory Vincent, D. Ditartre
Publikováno v:
IEEE Transactions on Electron Devices. 48:1765-1769
The experiments described in this paper show that base broadening effects due to extrinsic base implantation in SiGe HBTs can be suppressed by introducing a buried carbon layer under the SiGe/Si base prior to epitaxy. They also demonstrate that SiGe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dc46e82fea0bdeb642862fbe52f427d
https://doi.org/10.1109/16.936705
https://doi.org/10.1109/16.936705
Publikováno v:
Le Journal de Physique IV. :Pr8-327
Silicon-germanium heterostructures have introduced the opportunity to engineer the energy gap of Si, leading to a wide range of microelectronics device applications. During epitaxial layer growth as well as technology process steps, structural defect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::549aaa812b3ac25eab7590919a277c52
https://doi.org/10.1051/jp4:1999840
https://doi.org/10.1051/jp4:1999840
Autor:
A. Monroy, P. Ribot, Michel Marty, R. Planche, H. Baudry, S. Jouan, J.L. Regolini, P. Llinares, Didier Dutartre, R. Pantel, C. Morin, Alain Chantre, A. Perrotin, J. A. Chroboczek, Daniel Gloria, J. de Pontcharro, M. Laurens, G. Vincent
Publikováno v:
IEEE Transactions on Electron Devices. 46:1525-1531
A 200 mm 0.35 /spl mu/m silicon-germanium heterojunction bipolar transistor (SiGe HBT) technology involving epitaxially-aligned polysilicon emitters is described. The devices are shown to combine the high speed performances typical for poly-Si emitte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9ef283b2e7981223265166fba243047
https://doi.org/10.1109/16.772506
https://doi.org/10.1109/16.772506
Autor:
S. Jouan, P. Ribot, J. Pejnefors, T. Baffert, Michel Marty, Alain Chantre, J.L. Regolini, C. Morin
Publikováno v:
Materials Science in Semiconductor Processing. 1:317-323
Silicon–germanium materials have introduced the opportunity to engineer the energy band gap of Si, leading to a wide range of microelectronic device applications. The growth of high quality SiGe layers by chemical vapor deposition at reduced temper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5d4c7b5631f03249a903d2988b01061
https://doi.org/10.1016/s1369-8001(98)00025-0
https://doi.org/10.1016/s1369-8001(98)00025-0
Autor:
Odile Sergent, Amélie Rébillard, Xavier Tekpli, Mathieu Pizon, Dominique Lagadic-Gossmann, Patrick Legembre, Elodie Jouan, Marie-Thérèse Dimanche-Boitrel, David Gilot, S. Jouan-Lanhouet
Publikováno v:
European Journal of Cancer
European Journal of Cancer, Elsevier, 2010, 46 (8), pp.1445-55. ⟨10.1016/j.ejca.2010.01.034⟩
European Journal of Cancer, 2010, 46 (8), pp.1445-55. ⟨10.1016/j.ejca.2010.01.034⟩
European Journal of Cancer, Elsevier, 2010, 46 (8), pp.1445-55. ⟨10.1016/j.ejca.2010.01.034⟩
European Journal of Cancer, 2010, 46 (8), pp.1445-55. ⟨10.1016/j.ejca.2010.01.034⟩
International audience; In human colon cancer cells, cisplatin-induced apoptosis involves the Fas death receptor pathway independent of Fas ligand. The present study explores the role of ezrin and actin cytoskeleton in relation with Fas receptor in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7f7cc5781b5191d794f7a2fc8a40046e
https://hal.archives-ouvertes.fr/hal-00659626
https://hal.archives-ouvertes.fr/hal-00659626
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
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K zobrazení výsledku je třeba se přihlásit.
Autor:
A. Monroy, A. Chantre, Daniel Gloria, J. de Pontcharra, M. Laurens, Michel Marty, C. Morin, Roland Pantel, S. Jouan, J.L. Regolini, Didier Dutartre, M. Mouis
Publikováno v:
Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198).
A low complexity 0.35 /spl mu/m SiGe HBT technology, using a quasi self-aligned emitter/base structure on a non-selective Si/SiGe epitaxial base, is described. Excellent high frequency performances (f/sub max/ up to 71 GHz) are obtained, opening the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18b1708a550787d358575efb9da6e19a
https://doi.org/10.1109/bipol.1998.741887
https://doi.org/10.1109/bipol.1998.741887