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Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 5:442-448
Single mode operation in a wide temperature range (-40/spl deg/C/spl sim/+85/spl deg/C) has been obtained, from an etched-QW strongly gain-coupled (SGC) distributed-feedback laser at 1.3 /spl mu/m. The SGC lasers exhibit an excellent sidemode-suppres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abbec78e2c7011cc0875014ba920509c
https://doi.org/10.1109/2944.788403
https://doi.org/10.1109/2944.788403
Publikováno v:
IEEE Photonics Technology Letters. 11:1214-1216
More than 15 nm of continuous wavelength tuning range has been obtained by means of temperature tuning and current setting in three-section grating-cascaded strongly gain-coupled distributed-feedback lasers. Within the entire wavelength tuning range,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf7bdf97884453e5db1ca42468ea73a2
https://doi.org/10.1109/68.789695
https://doi.org/10.1109/68.789695
Publikováno v:
Offshore Technology Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03a932d4ff07afc6a08163e9d04fcb42
https://doi.org/10.4043/17294-ms
https://doi.org/10.4043/17294-ms
Publikováno v:
Offshore Technology Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e691fced6f7292c8841e60db2137453
https://doi.org/10.4043/17247-ms
https://doi.org/10.4043/17247-ms
Publikováno v:
Applied Physics Letters. 62:2486-2488
Chemically assisted ion beam etching (CAIBE) has been used to etch InGaAsP/InP ridge laser facets. Smooth, vertical facets 4 μm deep have been etched using Ar/Cl2 CAIBE with a beam voltage of 440 V and a beam current density of 0.08 mA/cm2. Room tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfdcb1094b7c60503682dcda622f9189
https://doi.org/10.1063/1.109327
https://doi.org/10.1063/1.109327
Autor:
Steven Dzioba, S. Livermore, R. Rousina, M. Young, J. P. D. Cook, F. R. Shepherd, S. Jatar, T. V. Herak
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:2848
Chemically assisted ion beam etching (CAIBE) and electron cyclotron resonance (ECR) plasma deposition have been used to etch and coat 1.3 μm InGaAsP/InP heterostructure lasers in full wafer form. Ar/Cl2 CAIBE, using an ECR dual grid ion source, was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::007515ffb002cafcd592cd2c1bee2d59
https://doi.org/10.1116/1.587203
https://doi.org/10.1116/1.587203
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 32:326-331
This paper describes a novel technique, based on the use of a microwave bridge, for the determination of very small changes in the phase and attenuation constants of semiconductor materials. Using this technique, the photoelectric and photodielectric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f8efdce3c7b39b002c1ca70ab328794
https://doi.org/10.1109/tim.1983.4315073
https://doi.org/10.1109/tim.1983.4315073
Publikováno v:
Solar Cells. 3:341-353
The kinetics of growth of chemiplated Cu 2− x S films on thermally deposited and chemically etched CdS layers were investigated. Scanning electron microscopy examination of parent films revealed the usual columnar growth and pyramidal tops as in ty
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c6b594152254c48fb9de96b660883da
https://doi.org/10.1016/0379-6787(81)90025-9
https://doi.org/10.1016/0379-6787(81)90025-9
Publikováno v:
Solar Energy Materials. 5:391-401
A photovoltaic SeCdO thin film cell has been fabricated by reactive sputtering of CdO on a crystallized selenium film using a cadmium target in the presence of argon plus residual air. Critical control of pressure is needed to obtain the appropria
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ec4d1dc5b6d83f84465db83506cdeef
https://doi.org/10.1016/0165-1633(81)90074-5
https://doi.org/10.1016/0165-1633(81)90074-5