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pro vyhledávání: '"S. Jallepalli"'
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Autor:
Al F. Tasch, M. Manassian, Christine M. Maziar, Haihong Wang, G. Chindalore, S. Jallepalli, S.A. Hareland, W.-K. Shih
Publikováno v:
IEEE Transactions on Electron Devices. 45:1487-1493
In this paper, models appropriate for device simulators are developed which account for the quantum mechanical nature of accumulated regions. Accumulation layer quantization is important in deep submicron (/spl les/0.25 /spl mu/m) MOS devices in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d71e30bd40b45e2976fd878561352116
https://doi.org/10.1109/16.701479
https://doi.org/10.1109/16.701479
Autor:
Al F. Tasch, W.-K. Shih, Christine M. Maziar, G. Chindalore, S.A. Hareland, S. Jallepalli, Haihong Wang
Publikováno v:
IEEE Transactions on Electron Devices. 45:179-186
As MOS devices have been successfully scaled to smaller feature sizes, thinner gate oxides and higher levels of channel doping have been used in order to simultaneously satisfy the need for high drive currents and minimal short-channel effects. With
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e35b8122e8e0079c6dc77e4f9e59fe8
https://doi.org/10.1109/16.658828
https://doi.org/10.1109/16.658828
Publikováno v:
Journal of Applied Physics. 81:2250-2255
Hole transport in bulk silicon is explored using an efficient and accurate Monte Carlo (MC) tool based on the local pseudopotential band structure. Acoustic and optical phonon scattering, ionized impurity scattering, and impact ionization are the dom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63cd1376af34c3537e5f5edbd0d8731b
https://doi.org/10.1063/1.364287
https://doi.org/10.1063/1.364287
Autor:
Khaled Hasnat, W.-K. Shih, S.A. Hareland, Al F. Tasch, V.M. Agostinelli, S. Jallepalli, Choh-Fei Yeap, Christine M. Maziar
Publikováno v:
IEEE Transactions on Electron Devices. 44:129-138
A thermionic emission model based on a non-Maxwellian electron energy distribution function for the electron gate current in NMOSFET's is described. The model uses hydrodynamic equations to describe more correctly the electron transport and gate inje
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c3d9391675a5150e5da6fc7c304ee62
https://doi.org/10.1109/16.554802
https://doi.org/10.1109/16.554802
Autor:
S.A. Hareland, S. Jallepalli, Choh-Fei Yeap, Al F. Tasch, V.M. Agostinelli, W.-K. Shih, Christine M. Maziar, Khaled Hasnat
Publikováno v:
IEEE Transactions on Electron Devices. 43:1264-1273
An energy parameterized pseudo-lucky electron model for simulation of gate current in submicron MOSFET's is presented in this paper. The model uses hydrodynamic equations to describe more correctly the carrier energy dependence of the gate injection
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2826019400db518d7d05bce07c462d9
https://doi.org/10.1109/16.506778
https://doi.org/10.1109/16.506778
Autor:
C.M. Maziar, S. Jallepalli, K. Hasnat, Al F. Tasch, Shyam Krishnamurthy, Choh-Fei Yeap, S.A. Hareland
Publikováno v:
IEEE Transactions on Electron Devices. 43:90-96
Successful scaling of MOS device feature size requires thinner gate oxides and higher levels of channel doping in order to simultaneously satisfy the need for high drive currents and minimal short-channel effects. However, in deep submicron (/spl les
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de87991b9d6368018300dc61f25f4d87
https://doi.org/10.1109/16.477597
https://doi.org/10.1109/16.477597
Publikováno v:
IEEE Transactions on Electron Devices. 47:643-645
This work presents for the first time experimental results for the extraction of the increase in the effective electrical oxide thickness (/spl Delta/t/sub ox/=t/sub ox,expt/-t/sub ox,physical/) in MOS accumulation layers with heavily doped substrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71c46186b8363cb2d135adfa312317ae
https://doi.org/10.1109/16.824741
https://doi.org/10.1109/16.824741
Autor:
S. Smith, Al F. Tasch, G. Chindalore, Christine M. Maziar, S.A. Hareland, V.K.F. Chia, S. Jallepalli
Publikováno v:
IEEE Electron Device Letters. 18:206-208
The authors report for the first time, accurately extracted experimental data for the threshold voltage shift (/spl Delta/V/sub T/) due to quantum mechanical (QM) effects in hole inversion layers in MOS devices, Additional experimental results are pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd1d06ffb8eaa1b481d2f759a7af4d1c
https://doi.org/10.1109/55.568765
https://doi.org/10.1109/55.568765
Autor:
J. Mogab, M. Zavala, Jerry G. Fossum, Colita Parker, D. Sing, R. Rai, J. Hughes, A. Vandooren, Bich-Yen Nguyen, Yang Du, Leo Mathew, Bruce E. White, W. Zhang, Rode R. Mora, Rob Shimer, S. Kalpat, Michael A. Sadd, Tab A. Stephens, G.O. Workman, S. Jallepalli, Aaron Thean
Publikováno v:
2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573).
Perfectly self aligned vertical multiple independent gate field effect transistor (MIGFET) CMOS devices have been fabricated. The unique process used to fabricate these devices allow them to be integrated with FinFET devices. Device and circuit simul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59ac5cac943ae0426e0d7018a8c20627
https://doi.org/10.1109/soi.2004.1391610
https://doi.org/10.1109/soi.2004.1391610