Zobrazeno 1 - 10
of 47
pro vyhledávání: '"S. Jakschik"'
Autor:
S. Jakschik, D. Kesslau
Publikováno v:
Physics Procedia. 41:566-571
Ultra fast laser processing is marketed for processes which require small thermal impact to the product. The process has its advantages in processing speed and quality. Recent applications have been in photo-voltaic processing, surface treatment or p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ccad211c32b7c1974b120e5aef2af721
Autor:
Roger Loo, G.S. Lujan, Byeong Chan Lee, Matty Caymax, Haruyuki Sorada, T.Y. Hoffmann, S Jakschik, Akira Inoue, S Hyun
Publikováno v:
Semiconductor Science and Technology. 22:S110-S113
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54e6a3893910388b4f9e0477455dad68
https://doi.org/10.1088/0268-1242/22/1/s26
https://doi.org/10.1088/0268-1242/22/1/s26
Autor:
Lars-Ake Ragnarsson, Serge Biesemans, S. Jakschik, Thierry Conard, Christoph Adelmann, Annelies Delabie, Hag–Ju Cho, V.S. Chang, A. Akheyar, S. Van Elshocht, Hong Yu Yu, Tom Schram, T. Hantschel, Philippe Absil
Publikováno v:
IEEE Electron Device Letters. 29:743-745
Cap layers have been used to modulate the effective work function (EWF) for high- /metal-gate CMOS devices. We have investigated the impact of stacking cap layers on the EWF. Stacked cap layers consisting of two sequential cap layers, including, Al2O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b20c41899fa6cbb4c7f95b379491c0f8
https://doi.org/10.1109/led.2008.923317
https://doi.org/10.1109/led.2008.923317
Publikováno v:
Applied Physics Letters. 84:3076-3078
We analyze the field and temperature dependence of electron currents through atomic-layer-deposited thin (3.6–6 nm) sheets of Al2O3 which were annealed above the crystallization temperature. On the basis of electrical characterization and numerical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73d342487e74bab90178f5fd6085b9da
https://doi.org/10.1063/1.1703840
https://doi.org/10.1063/1.1703840
Autor:
S. Jakschik, S. Blei
Publikováno v:
Photonics Russia. :36-31
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cfcd4364d3a8fa1b3a7ce3cb4f967b1
https://doi.org/10.22184/1993-7296.2016.58.4.26.31
https://doi.org/10.22184/1993-7296.2016.58.4.26.31
Autor:
S. Jakschik, T. Hoffmann, H.-J. Cho, A. Veloso, R. Loo, S. Hyun, H. Sorada, A. Inoue, M.d. Potter, G. Eneman, S. Severi, P. Absil, S. Biesemans
Publikováno v:
2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
This report presents high-k poly ring oscillators with a performance of tau=16.2 ps/st at 6E-6A/st for Lg=80 nm. This was achieved by using a SiGe channel for nFET and pFET. A minimum device length of 50 nm was built by using this technique. The tran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::875ffe1d0c24c4cd29bfa6bafe06ee4e
https://doi.org/10.1109/vtsa.2007.378905
https://doi.org/10.1109/vtsa.2007.378905
Autor:
T. Hecht, M. Gutsche, Uwe Schröder, G. Steinlesberger, Hans Reisinger, M. Leonhard, S. Jakschik, D. Schumann, H. Seidl
Publikováno v:
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
This work is intended to draw attention to the effect of dielectric relaxation which is shown to severely influence the performance of alternative dielectrics in DRAM storage capacitors as well as of the gate dielectrics of MOSFETs. A comparison of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26c0a9c68215a406f4a8c6361aa18a5c
https://doi.org/10.1109/iedm.2001.979481
https://doi.org/10.1109/iedm.2001.979481
Publikováno v:
2001 Proceedings. 51st Electronic Components and Technology Conference (Cat. No.01CH37220).
Delamination of underfill in flip chips is a widely accepted major cause for failure. However, there is a lack of information on the mechanism of this effect. A novel methodology is used to examine these delaminations in this paper. Instead of the ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fe1ab8274a1d9c2342f17adf9d3cf32
https://doi.org/10.1109/ectc.2001.927699
https://doi.org/10.1109/ectc.2001.927699
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Akademický článek
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