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Akademický článek

Physical Properties of Sputtered Germanium-Doped Indium Tin Oxide Films (ITO: Ge) Obtained at Low Deposition Temperature

Autor: S. J. Wen, G. Campet, J. P. Manaud

Publikováno v: Active and Passive Electronic Components, Vol 15, Iss 2, Pp 67-74 (1993)

Undoped and Ge-doped ITO films (ITO: Ge) deposited at low temperature (70℃) have been studied. Although both samples have the same carrier concentration, a higher carrier mobility occurs for ITO: Ge. An evaluation of the relative position of the do

Externí odkaz: https://doaj.org/article/9a4cc7d5159e42ce93fcc208e2358c6b

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Akademický článek

Electronic Properties of Sn- or Ge-Doped In2O3 Semiconductors

Autor: S. J. Wen, G. Campet

Publikováno v: Active and Passive Electronic Components, Vol 16, Iss 1, Pp 41-47 (1993)

The thermoelectric power and Hall effect of In2O3 single crystals, either undoped or Sn doped, and of In2O3 ceramics, either undoped or Sn or Ge doped, are investigated. All doped samples have negative thermoelectric power values. The metal-type cond

Externí odkaz: https://doaj.org/article/7e90e910b5f34d01a62f3750ad5fb6bc

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Akademický článek

The Textural Effect of Cu Doping and the Electronic Effect of Ti, Zr and Ge Dopings Upon the Physical Properties of In2O3 and Sn-Doped In2O3 Ceramics

Autor: S. J. Wen, G. Campet

Publikováno v: Active and Passive Electronic Components, Vol 15, Iss 2, Pp 79-87 (1993)

The electronic properties of Cu-, Ti-, Zr-, and Ge-doped In2O3 (IO) and ITO (Sn-doped In2O3) ceramics are investigated. We distinguish the different effect of Cu doping (so called the “textural effect”) and of Ti, Zr and Ge dopings (so called the

Externí odkaz: https://doaj.org/article/e779cdfdd2ee472290e325cd7995cc8c

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Akademický článek

Electrochromism and Electrochromic Windows

Autor: G. Campet, J. Portier, S. J. Wen, B. Morel, M. Bourrel, J. M. Chabagno

Publikováno v: Active and Passive Electronic Components, Vol 14, Iss 4, Pp 225-231 (1992)

The properties of electrochromic thin film materials, i.e., those that can be reversibly colored by the passage of charge, are described. The application of some of these thin film compounds for the development of electrochromic windows is discussed.

Externí odkaz: https://doaj.org/article/56f9387bc844402f8d9fa50ae75c6b68

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Akademický článek

Influence of Thermal Treatment on The Electronic Properties of ITO Thin Films Obtained by RF Cathodic Pulverization. Study of Solar Cells Based on Silicon/(RF Sputtered) ITO Junctions

Autor: G. Campet, C. Geoffroy, S. J. Wen, J. Portier, P. Keou, J. Salardenne, Z. W. Sun

Publikováno v: Active and Passive Electronic Components, Vol 14, Iss 3, Pp 151-161 (1991)

ITO (Indium Tin Oxide) thin films obtained by R.F cathodic sputtering have been studied. The influence of thermal treatment on the electronic properties of the films has been particularly investigated. Electrical measurements were performed between 9

Externí odkaz: https://doaj.org/article/d1e06ffd0caf4fbbb308a65524867bdb

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