Zobrazeno 1 - 10
of 43
pro vyhledávání: '"S. J. T. Owen"'
Autor:
T. L. Tansley, S. J. T. Owen
Publikováno v:
Active and Passive Electronic Components, Vol 3, Iss 2, Pp 67-75 (1976)
Externí odkaz:
https://doaj.org/article/c77c770c87b34dd8b3e132ab8462a0eb
Publikováno v:
Proceeding of Flexible Automation and Intelligent Manufacturing, 1997.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::726e0d7bdbd216cb19310d8c435a9019
https://doi.org/10.1615/faim1997.300
https://doi.org/10.1615/faim1997.300
Autor:
T. L. Tansley, S. J. T. Owen
Publikováno v:
Journal of Applied Physics. 55:454-459
Heterojunctions have been prepared by the reactive rf, sputter deposition of n‐ZnO on sputter‐etched n‐ and p‐type silicon substrates. Measurements of conductance show typical low‐reverse breakdown at 18–25 V and forward currents of 2–1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3697da35e8f8f85584f570df66bc7574
https://doi.org/10.1063/1.333093
https://doi.org/10.1063/1.333093
Publikováno v:
Journal of Applied Physics. 52:7224-7231
The electrical and optical properties of as‐grown and implanted and annealed vapor phase epitaxial GaAs have been determined and compared by photoluminescence, transient capacitance spectroscopy, and Hall measurements. The dominant electron trap le
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31ba7de844d6d931d7915514008aea9f
https://doi.org/10.1063/1.328707
https://doi.org/10.1063/1.328707
Autor:
T. L. Tansley, S. J. T. Owen
Publikováno v:
Journal of Vacuum Science and Technology. 13:954-960
Theoretical calculations of thermally assisted tunnelling currents enable the ideality factor η to be computed for metal/semiconductor diodes and semiconductor heterojunctions. The calculation is based on a generalization of Bethe’s original formu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e9e821433bdceb874e3bc93dc18ff65
https://doi.org/10.1116/1.569028
https://doi.org/10.1116/1.569028
Publikováno v:
Journal of The Electrochemical Society. 134:160-165
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::748a6fd9faac72b073c7482272492a78
https://doi.org/10.1149/1.2100399
https://doi.org/10.1149/1.2100399
Publikováno v:
Journal of Materials Science. 2:88-96
The article serves as an introduction to a comprehensive list of references on semiconductor heterojunctions. Several methods of producing such structures are given, together with a table of materials between which heterojunctions have been formed. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c633bde22d659eeacacb611b92f704ab
https://doi.org/10.1007/bf00550056
https://doi.org/10.1007/bf00550056
Publikováno v:
Journal of Materials Science. 6:413-418
An account is given of the various types of crystal growth observed when GaAs is grown by a conventional vapour transport process on to a tungsten substrate. Three main types of growth are described: The thin layers appear to grow by steps sweeping a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9778552b2602e2ebab9c1a42ab3f770
https://doi.org/10.1007/bf02403061
https://doi.org/10.1007/bf02403061
Publikováno v:
Physica Status Solidi (b). 28:295-303
The experimental details are given of an evaporation technique for producing epitaxial layers of zinc selenide on 0.1 Ωcm p-type germanium substrates. The degree of crystal order in the deposited layer is presented and the results show that, whilst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::615a979f888fa0e457db3c282b978524
https://doi.org/10.1002/pssb.19680280131
https://doi.org/10.1002/pssb.19680280131
Publikováno v:
Journal of Materials Science. 5:1054-1060
Vacuum deposition of epitaxial films of zinc sulphide onto (111) 0.1Ω cm p type germanium substrates is described. The films contain stacking faults similar to those observed in epitaxial thin films of other substances and possess similar electrical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db1635dedcbfe22f00be98d9481007cb
https://doi.org/10.1007/bf02403277
https://doi.org/10.1007/bf02403277