Zobrazeno 1 - 10
of 35
pro vyhledávání: '"S. J. Sheih"'
Publikováno v:
Laser Physics. 21:1638-1644
This is a study on the design of variable gain-flattened erbium-doped fiber amplifier operating in L-band transmission window. Four amplifiers divided into five stages became the basis of the design with distributed pumping configuration. A dispersio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::232f2f172ad81366bac4065f62bff6d0
https://doi.org/10.1134/s1054660x11170014
https://doi.org/10.1134/s1054660x11170014
Publikováno v:
Laser Physics. 20:1824-1828
We demonstrate the effect of inversion population ratio mediated by 980 nm pumping band on the gain spectra of a gain-flattened Erbium-doped fiber amplifier. The gain equalizing filter was designed at 977 nm and the amplifier was built in the four-st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1af499a55826b9ca1c07830596b70f32
https://doi.org/10.1134/s1054660x10170135
https://doi.org/10.1134/s1054660x10170135
Publikováno v:
Laser Physics. 20:1747-1751
Erbium-doped fiber amplifier with flat gain over 30 nm bandwidth is demonstrated using flexible selective band methods. The band optical amplifier was designed to cater 44 wavelength division multiplexing channels which were separated into bands of 4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da6188c0645abc2de5a7ed790752992b
https://doi.org/10.1134/s1054660x10150144
https://doi.org/10.1134/s1054660x10150144
Autor:
Mohd Adzir Mahdi, A. Ahmad, M. A. Mas Izyani, Faisal Rafiq Mahamd Adikan, A.K. Zamzuri, S. J. Sheih
Publikováno v:
Microwave and Optical Technology Letters. 45:333-335
The impact of employing a hybrid Raman/Erbium-doped fiber amplifier (EDFA) in a transmission system is demonstrated by considering the optical signal-to-noise ratio (OSNR) performance. The gain flatness of hybrid Raman/EDFA is maintained below 1.2 dB
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11658acee3809fbb15d3cae8019d9895
https://doi.org/10.1002/mop.20815
https://doi.org/10.1002/mop.20815
Autor:
Kong-Thon Tsen, Arnel Salvador, E. D. Grann, Otto F. Sankey, Hadis Morkoç, S. E. Günçer, David K. Ferry, S. J. Sheih, A. Botcharev
Publikováno v:
Physical Review B. 51:1631-1641
High-field electron transport in GaAs-based p-i-n nanostructure semiconductors has been studied by transient picosecond Raman spectroscopy at T=80 K. Both electron-distribution functions and electron-drift velocities have been directly measured as a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b7ffb8c9e615640fac5374acc0ad60db
https://doi.org/10.1103/physrevb.51.1631
https://doi.org/10.1103/physrevb.51.1631
Autor:
Selim E. Günçer, H. Morkof, E. D. Grann, S. J. Sheih, David K. Ferry, A. Botcharev, Kong-Thon Tsen, A. Salvador
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 1:1093-1099
Electron transport in an Al/sub x/Ga/sub 1-x/As (x=0.3) based p-i-n nanostructure semiconductor under the application of an electric field has been studied at T=80 K by picosecond transient Raman spectroscopy. Single-particle excitations associated w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0824aa5c9a34ad12776f2787816fa6fc
https://doi.org/10.1109/2944.488686
https://doi.org/10.1109/2944.488686
Publikováno v:
Chinese Optics Letters. 9:020603
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::712fb93c0a775e3cc05e7ba6e8840c38
https://doi.org/10.3788/col201109.020603
https://doi.org/10.3788/col201109.020603
Autor:
Arnel Salvador, Hadis Morkoç, S. J. Sheih, B. Sverdlov, Kong-Thon Tsen, A. Botchkarev, David K. Ferry
Publikováno v:
Applied Physics Letters. 67:1757-1759
Picosecond Raman spectroscopy has been employed to study electron–phonon interactions in the wide band‐gap semiconductor GaN. By using very intense picosecond laser pulses in the visible spectral range, electron‐hole pairs were generated throug
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e93962901d8bed39e8f0e20ac15e74cb
https://doi.org/10.1063/1.115040
https://doi.org/10.1063/1.115040
Autor:
S. J. Sheih, Selim E. Günçer, Chih Ta Chia, A. Botcharev, Kong-Thon Tsen, E. D. Grann, Hadis Morkoç, Ravi Droopad, Arnel Salvador, David K. Ferry, Otto F. Sankey, George N. Maracas
Publikováno v:
Applied Physics Letters. 64:1230-1232
Electron transport in GaAs‐based p‐i‐n nanostructure semiconductors under the application of an electric field has been studied by transient Raman spectroscopy on a picosecond time scale and at T≂80 K. For an injected carrier density of n≂2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03d6985179bdea600e4a0b0f37245f7f
https://doi.org/10.1063/1.110848
https://doi.org/10.1063/1.110848
Publikováno v:
Optical Fiber Communication Conference. Technical Digest Postconference Edition. Trends in Optics and Photonics Vol.37 (IEEE Cat. No. 00CH37079).
We have measured the dynamic behavior of a two-stage L-Band EDFA. The response time constants are about 105 /spl mu/s and 260 /spl mu/s when one and seven out of eight channels were dropped accordingly and the amplifier was well saturated. These valu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d33d1606573ebd1e85abdf6db5777c37
https://doi.org/10.1109/ofc.2000.868254
https://doi.org/10.1109/ofc.2000.868254