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The DC performance of silicided N-channel devices is characterised primarily by the current drive capability. However, this is adversely influenced by the series resistance of the device which arises primarily from the lightly doped region located be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d797c4364ac72cdf04bc3f572aebbaac
https://doi.org/10.1007/978-3-642-52314-4_174
https://doi.org/10.1007/978-3-642-52314-4_174