Zobrazeno 1 - 6 of 6 pro vyhledávání: '"S. J. Rolfe"'
1
Effects of initial annealing treatments on the electrical characteristics and stability of unpassivated CdSe thin film transistors
Autor: D. P. Masson, L. LeBrun, Dolf Landheer, S. Belkouch, T. Quance, S. R. Das, S. J. Rolfe
Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:860-863
Secondary ion mass spectrometry shows that when CdSe is annealed in air at 350 °C oxygen diffuses inside the grains and the diffusion is enhanced at the grain boundaries. Subsequent vacuum annealing removes oxygen from inside the grains and from the
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b1375dcfef04adbca59d38c289a83843
https://doi.org/10.1116/1.581023
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3
Characterization of boron‐doped silicon epitaxial layers by x‐ray diffraction
Autor: S. J. Rolfe, J.‐M. Baribeau
Publikováno v: Applied Physics Letters. 58:2129-2131
Heavily boron‐doped (Na≳1×1019 cm−3)Si epilayers grown on (100)Si by molecular beam epitaxy are investigated using double‐crystal x‐ray diffractometry. The variation of the Si lattice constant as a function of boron concentration is obtain
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b1c2ae15a36cc46d56b335208506a2ea
https://doi.org/10.1063/1.104982
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4
A simple wet etch for GaN
Autor: J. A. Bardwell, I. G. Foulds, J. B. Webb, H. Tang, J. Fraser, S. Moisa, S. J. Rolfe
A simple UV photo-enhanced wet etch has been developed for GaN. Unlike photoelectrochemical wet etching, this technique does not require an electrical contact to be made to the sample, and nitrides deposited on insulating substrates (such as sapphire
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc52f2b315ccd823f233903d11f9398e
https://nrc-publications.canada.ca/eng/view/object/?id=fd089cb8-b17b-429a-a44b-35dc78696c60
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5
Epitaxy of Si/Si[sub 1−x]Ge[sub x] heterostructures with very small roughness using a production-compatible ultrahigh vacuum-chemical vapor deposition reactor
Autor: Doug D. Perovic, B. F. Mason, H. Lafontaine, S. J. Rolfe, B. Bahierathan
Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 16:599
Two different roughening mechanisms are studied using a production-ready epitaxial deposition system to grow various epilayers, including the base layer of bipolar transistors. Surface roughness is measured using atomic force microscopy and transmiss
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6924bf43ce57fc3ae26115d44c9201d5
https://doi.org/10.1116/1.589869
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6
Characterization of Si1−xGex epilayers grown using a commercially available ultrahigh vacuum chemical vapor deposition reactor
Autor: S. J. Rolfe, D. C. Houghton, D. Elliot, Nelson Rowell, J.-M. Baribeau, S. Laframboise, G. I. Sproule, H. Lafontaine
Publikováno v: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 14:1675
Si1−xGex epitaxial layers were grown at T=525 °C using a commercially available, ultrahigh vacuum chemical vapor deposition reactor. Various techniques, including cross‐sectional transmission electron microscopy, Auger electron spectroscopy, sec
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2b86d63782744b74752ae2e5284f129
https://doi.org/10.1116/1.589209
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