Zobrazeno 1 - 10
of 32
pro vyhledávání: '"S. J. Murry"'
Autor:
D. Zhang, L. R. Ram-Mohan, Igor Vurgaftman, William W. Bewley, C. H. Lin, Shin-Shem Pei, Jerry R. Meyer, S. J. Murry, Christopher L. Felix
Publikováno v:
Journal of Applied Physics. 83:2384-2391
We report an experimental and theoretical investigation of internal losses in optically pumped type-II lasers with InAs/GaSb/Ga1−xInxSb/GaSb superlattice active regions. Whereas the losses are found to be moderate at 100 K (11–14 cm−1), they in
Autor:
Igor Vurgaftman, Rui Q. Yang, William W. Bewley, S. J. Murry, Jerry R. Meyer, D. Zhang, Christopher L. Felix, C.H. T. Lin, Shin-Shem Pei, Edward H. Aifer
Publikováno v:
Journal of Electronic Materials. 27:77-80
We have demonstrated the operation at λ ≈ 3.0 μm of a 22-stage interband cascade laser with a “W” active region for enhanced gain. The threshold current density for a ridge structure is 170 A/cm2 at 80K, and it remains lower than the best rep
Autor:
Lew Goldberg, James R. Lindle, Chih-Hsiang Lin, P.C. Chang, Christopher L. Felix, J. I. Malin, D. Zhang, S. J. Murry, Rui Q. Yang, Craig A. Hoffman, Shin-Shem Pei, Jerry R. Meyer, E. J. Bartoli
Publikováno v:
Journal of Electronic Materials. 26:440-443
We report optically pumped four-constituent InAs/InGaSb/InAs/AlSb type-II quantum-well lasers emitting at 3.2–4.1 μm. Lasing was observed up to 350K under pulsed operation, with a characteristic temperature T0 up to 68K at temperatures above ambie
Autor:
Christopher L. Felix, Yucai Zhou, Chih-Hsiang Lin, P.C. Chang, S. J. Murry, J.F. Pinto, Jerry R. Meyer, Craig A. Hoffman, Shin-Shem Pei, J. I. Malin, D. Zhang
Publikováno v:
Journal of Crystal Growth. :955-959
We have employed molecular-beam epitaxy (MBE) for the growth of mid-infrared (MIR) type-II quantum-well laser structures. These lasers consist of strain-balanced InAs/InGasb/InAs/AlSb type-II quantum wells lattice-matched to the AlSb cladding layers.
Publikováno v:
Applied Physics Letters. 72:2220-2222
An external differential quantum efficiency exceeding 200% has been observed from 4 μm InAs/InGaSb/AlSb interband cascade lasers under 1 μs pulses and 0.1% duty cycle at 80 K. By increasing the pulse lengths and the repetition rates, average powers
Autor:
Jerry R. Meyer, Christopher L. Felix, Edward H. Aifer, S. J. Murry, Shin-Shem Pei, C.H. T. Lin, Igor Vurgaftman, D. Zhang, William W. Bewley
Publikováno v:
Applied Physics Letters. 71:3607-3609
A 2.9 μm diode laser with InAs/GaSb/Ga0.75In0.25Sb/GaSb superlattice active region displays a maximum operating temperature of 260 K. At 200 K, the threshold current density is 1.1 kA/cm2 and the quantum efficiency is >15%. The peak output power per
Publikováno v:
IEEE Photonics Technology Letters. 9:1573-1575
We report optically pumped InAs-InGaSb-InAs-AlSb type-II quantum-well lasers at 3.84-4.48 /spl mu/m. Lasing was observed at temperatures up to 300 K with a characteristic temperature T/sub 0/ of 61.6 K. The average absorbed threshold power was only 0
Publikováno v:
Applied Physics Letters. 71:2409-2411
We report a high power mid-infrared interband cascade laser operating at temperatures up to 170 K. The threshold current densities of this laser are considerably lower than the previously reported values in cascade lasers. The structure was grown by
Autor:
C.H. T. Lin, Christopher L. Felix, Jerry R. Meyer, Shin-Shem Pei, D. Zhang, S. J. Murry, Igor Vurgaftman
Publikováno v:
IEEE Photonics Technology Letters. 9:734-736
Laser emission at 4.2-4.5 /spl mu/m has been observed at temperatures up to 310 K in pulsed optical pumping experiments on type-II quantum-well (QW) lasers with four constituents in each period (InAs-Ga/sub 1-x/In/sub x/Sb-InAs-AlSb). The characteris
Autor:
Shin-Shem Pei, Margaret Buchanan, Rui Q. Yang, H. C. Liu, S. J. Murry, Chih-Hsiang Lin, Emmanuel Dupont
Publikováno v:
Applied Physics Letters. 70:2013-2015
Interband cascade electroluminescence in the 5–8 μm spectrum region is observed from a staircase of Sb-based type-II quantum well structures. The structure was grown by molecular beam epitaxy on a GaSb substrate and comprises 15 periods of active