Zobrazeno 1 - 10
of 107
pro vyhledávání: '"S. J. Mukhopadhyay"'
Autor:
Budhaditya Majumdar, S. J. Mukhopadhyay, Subhas Chandra Mukhopadhyay, Sayan Kanungo, Karumbaiah N. Chappanda
Publikováno v:
IEEE Sensors Journal. 21:21643-21652
In this work, a Diagonal Tunneling Dielectrically Modulated Tunnel Field Effect Transistor (DT-DMTFET) architecture is proposed for label-free bio-sensing application. The performance of this sensor architecture is comprehensively investigated with t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37ca6115ad9a1901083c4dbd7a3b7e0d
https://doi.org/10.1109/jsen.2021.3103998
https://doi.org/10.1109/jsen.2021.3103998
Publikováno v:
IETE Journal of Research. 68:4279-4289
A comparative study is done on Si, 4H-SiC, Wz-GaN and InP based impact avalanche transit time (IMPATT) diodes operating at 94 GHz. A double-iterative simulation procedure is utilized to investigate...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3183cc295e2673f8fab93bc62d08b618
https://doi.org/10.1080/03772063.2020.1791742
https://doi.org/10.1080/03772063.2020.1791742
Publikováno v:
IETE Journal of Education. 61:16-24
This paper highlights the effect of temperature on the high-frequency performance of the double avalanche region avalanche transit time (ATT) source capable of operating in multiple numbers of freq...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99a641e4aa6207900195e5aba02988d6
https://doi.org/10.1080/09747338.2020.1760739
https://doi.org/10.1080/09747338.2020.1760739
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811963001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f409e3d4e7ad2333ead6360654a6b5a
https://doi.org/10.1007/978-981-19-6301-8_10
https://doi.org/10.1007/978-981-19-6301-8_10
Publikováno v:
Algorithms for Intelligent Systems ISBN: 9789811633676
In this present article, DC and noise simulation is accomplished on 1-D model of Si IMPATTs at Ka band. The simulated outcomes from the present method are in close agreement with experimental one.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c989c2a725a106805a91c1ed7288b7d
https://doi.org/10.1007/978-981-16-3368-3_3
https://doi.org/10.1007/978-981-16-3368-3_3
Publikováno v:
International Journal of Electronics Letters. 9:36-46
This paper is scrutinised elaborately to traverse the probability and potency of type-IIb diamond as a semiconducting substance of double-drift region (DDR) impact ionisation avalanche transit time...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5b621d47058680d87c05eab5d46a356
https://doi.org/10.1080/21681724.2019.1661017
https://doi.org/10.1080/21681724.2019.1661017
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789813344884
In this paper, detailed study has been explored on Si and SiC(4H) based avalanche transit time (ATT) sources for operation at frequencies under millimeter-wave and terahertz (THz) regimes. Drift–diffusion model has been used here to scrutinize the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00f7c9e0f3c4cc4120c887e9cbf9b943
https://doi.org/10.1007/978-981-33-4489-1_5
https://doi.org/10.1007/978-981-33-4489-1_5
Publikováno v:
Computers and Devices for Communication ISBN: 9789811583650
Investigations are carried out on the space charge dependence of the negative resistances of avalanche and drift layers of double-drift region (DDR), indium phosphide (InP) and impact ionization avalanche transit time (IMPATT) diodes at high bias cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e31a4a20c0073da91518e908654b6044
https://doi.org/10.1007/978-981-15-8366-7_38
https://doi.org/10.1007/978-981-15-8366-7_38
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789813344884
During last few years, numerous researches have been processed for the growth of reliable sources in the terahertz (THz) frequency regime. Among different solid-state sources, impact ionization avalanche transit time (IMPATT) diode is the most promis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c52e3ad0be80739e4b6cd17bd03a741
https://doi.org/10.1007/978-981-33-4489-1_4
https://doi.org/10.1007/978-981-33-4489-1_4
Publikováno v:
Emerging Trends in Terahertz Solid-State Physics and Devices ISBN: 9789811532344
Small-signal noise simulations have been performed to explore the potency of avalanche transit time (ATT) oscillators based upon wide bandgap (WBG) semiconducting substances like 3C-SiC and type-IIb diamond (C) as millimeter-wave (mm-wave) and terahe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ceaf601d6430b17d77fc318784dec9a
https://doi.org/10.1007/978-981-15-3235-1_3
https://doi.org/10.1007/978-981-15-3235-1_3