Zobrazeno 1 - 7
of 7
pro vyhledávání: '"S. J. Moloi"'
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-12 (2023)
Abstract Quantitative analysis of materials from Heavy Ion PIXE spectra remains impeded by the lack of reliable X-ray production cross section (XPCS) data. Although efforts at experimental Heavy Ion induced XPCS measurements still continue, Multiple
Externí odkaz:
https://doaj.org/article/8e7d8559106f40e7b3d147e070b51f43
Autor:
J. O. Bodunrin, S. J. Moloi
Publikováno v:
Silicon. 14:10237-10244
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f50b13f0ddc6fe2743e819e9476f1b5
https://doi.org/10.1007/s12633-022-01767-8
https://doi.org/10.1007/s12633-022-01767-8
The electrical properties of diodes fabricated on undoped and zinc-doped n-silicon were investigated in this study using current-voltage (I-V) and capacitance-voltage-frequency (C-V-f) techniques. The diode’s forward current decreased by a factor o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91a732fa68ae282e56f50a5a3cb57ac1
https://doi.org/10.21203/rs.3.rs-1865360/v1
https://doi.org/10.21203/rs.3.rs-1865360/v1
Publikováno v:
MRS Advances. 3:2247-2250
Copper Zinc Tin Sulphide (Cu2ZnSnS4) materials are of interest for Photovoltaic applications. In this work, i.e., the first phase of Cu2ZnSnS4 synthesis, Cu-Zn-Sn film precursors were synthesised using electron beam deposition. The crystal structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a5962fde6b0157f898e028930fcd23a
https://doi.org/10.1557/adv.2018.509
https://doi.org/10.1557/adv.2018.509
Autor:
M. McPherson, Lakhdar Dehimi, Nouredine Sengouga, A. Saadoune, K. Bekhouche, S. J. Moloi, B.K. Jones
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 13:1-8
The effective space charge density Neff is the average density of carriers over the depletion layer in a semiconductor diode and is measured from the capacitance-voltage curve extrapolated to full depletion Vd. Full semiconductor modeling has been pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1655edf968814ff8376e390809a322f7
https://doi.org/10.1109/tdmr.2012.2234460
https://doi.org/10.1109/tdmr.2012.2234460
Autor:
K. Sudhakar, N. Naryana Reddy, K. Madhusudhana Rao, S. J. Moloi, A. Babul Reddy, E. Rotimi Sadiku
Publikováno v:
Polyethylene-Based Biocomposites and Bionanocomposites
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f997ff295f302f8248068d5f62f0d7bc
https://doi.org/10.1002/9781119038467.ch5
https://doi.org/10.1002/9781119038467.ch5
Publikováno v:
Journal of Physics: Conference Series; 2018, Vol. 984 Issue 1, p1-1, 1p