Zobrazeno 1 - 10
of 17
pro vyhledávání: '"S. J. Jokela"'
Publikováno v:
Optical Sensors and Sensing Congress.
Photoluminescence spectroscopy is an important technique for characterizing optical properties of semiconductors. Using a confocal laser microscope system, 2D PL maps of technologically important materials were obtained with excellent signal-to-noise
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-6 (2017)
Materials with persistent photoconductivity (PPC) experience an increase in conductivity upon exposure to light that persists after the light is turned off. Although researchers have shown that this phenomenon could be exploited for novel memory stor
Autor:
S. J. Jokela, Matthew D. McCluskey
Publikováno v:
Physica B: Condensed Matter. :395-398
The renewed interest in zinc oxide (ZnO) has provided a great number of details that could lead to a commercially viable alternative to gallium nitride (GaN) for use in high-efficiency, wide band-gap devices. The difficulty in obtaining such devices
Publikováno v:
Physica B: Condensed Matter. :690-693
Zinc oxide (ZnO) is a wide-band gap semiconductor that has attracted resurgent interest as an electronic material for a range of applications. In our work, we have focused on the properties of hydrogen donors in ZnO. In bulk, single-crystal ZnO doped
Publikováno v:
Physica B: Condensed Matter. :221-224
Zinc oxide (ZnO) has shown great promise as a wide band gap semiconductor with optical, electronic, and mechanical applications. First-principles investigations by C. G. Van de Walle (Phys. Rev. Lett. 85 (2000) 1012) suggest that hydrogen may act as
Publikováno v:
Physica B: Condensed Matter. 404:4810-4812
Zinc oxide (ZnO) is a wide band gap II–VI semiconductor with optical, electronic, and mechanical applications. Nitrogen is a promising acceptor dopant. Nitrogen–hydrogen (N–H) complexes were introduced into ZnO during chemical vapor transport (
Autor:
Matthew D. McCluskey, S. J. Jokela
Publikováno v:
Physica B: Condensed Matter. :355-357
Zinc oxide (ZnO) is a strong candidate for energy-efficient white lighting and numerous optoelectronic applications. Hydrogen impurities play important roles, good and bad, in the pursuit of reliable p-type doping of ZnO. In pervious work, we identif
Publikováno v:
Applied Physics Letters. 81:3807-3809
Zinc oxide (ZnO) is a wide-band gap semiconductor that has attracted tremendous interest for optical, electronic, and mechanical applications. First-principles calculations by [C. G. Van de Walle, Phys. Rev. Lett. 85, 1012 (2000)] have predicted that
Publikováno v:
MRS Proceedings. 1167
Zinc oxide (ZnO) has attracted resurgent interest as an active material for energy-efficient lighting applications. An optically transparent crystal, ZnO emits light in the blue-to-UV region of the spectrum. The efficiency of the emission is higher t
Autor:
Matthew D. McCluskey, S. J. Jokela
Publikováno v:
Physical Review B. 76
Zinc oxide (ZnO) is a wide-band-gap semiconductor with a range of potential applications in optoelectronics. The lack of reliable $p$-type doping, however, has prevented it from competing with other semiconductors such as GaN. In this Brief Report, w