Zobrazeno 1 - 2
of 2
pro vyhledávání: '"S. J. J. Teng"'
Publikováno v:
MTT-S International Microwave Symposium Digest.
A new metal-semiconductor device is reported whose I-V characteristic is controlled by a geometric gap between adjacent Schottky barrier regions. An improved performance low turn-on votlage GaAs diode is demonstrated at 10 through 70 GHz.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79c4561abf58cdc6b64ce7ab3337a166
https://doi.org/10.1109/mwsym.1982.1130596
https://doi.org/10.1109/mwsym.1982.1130596
Publikováno v:
Applied Physics Letters. 48:1217-1219
Crystal growth of InP on GaAs by vapor phase epitaxy is reported. It is demonstrated that good quality InP epitaxial layers with featureless surface morphology can be grown on GaAs substrate. Carrier concentration profile and Hall mobility measuremen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b47d64c0602a170bced44bf313e915bc
https://doi.org/10.1063/1.96986
https://doi.org/10.1063/1.96986