Zobrazeno 1 - 7
of 7
pro vyhledávání: '"S. J. Chey"'
Publikováno v:
Advanced Materials. 17:1285-1289
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dcc8b89aa95cfbc71fb418c07757376
https://doi.org/10.1002/adma.200401443
https://doi.org/10.1002/adma.200401443
Publikováno v:
SID Symposium Digest of Technical Papers. 31:446-449
We have discovered that single evaporation of SiO2 can align liquid crytstal either homogeneously or homeotropically depending on the dielectric anisotropy of liquid crystal being positive or negative, respectively. Van der Waals potential taking int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::587116ecd305847d5f87f004aefa3d35
https://doi.org/10.1889/1.1832977
https://doi.org/10.1889/1.1832977
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:3460-3463
Dimer chains formed during deposition of Si on Si(100)-2×1 at ∼435 K have been analyzed using scanning tunneling microscopy. Results are compared with the outcome of Monte Carlo simulations. The size distributions obtained from experiments and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33f0019a05623fc72571713a8311f396
https://doi.org/10.1116/1.581503
https://doi.org/10.1116/1.581503
Autor:
J. E. Van Nostrand, G.B. Gao, D. G. Park, David G. Cahill, Hadis Morkoç, S. J. Chey, Meng Tao, Z.F. Fan, S.N. Mohammad, Daizhen Li, A. Botchkarev, S. K. Suzue, J. Reed
Publikováno v:
Solid-State Electronics. 38:1351-1357
GaAs based metal-insulator-semiconductor structures utilizing a pseudomorphic Si interface layer were investigated. Deposition involved molecular beam epitaxy for GaAs and remote plasma enhanced chemical vapor epitaxy for Si and insulator (Si 3 N 4 )
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3d2f3ecf47f68548a6e4533159682f7
https://doi.org/10.1016/0038-1101(94)00267-j
https://doi.org/10.1016/0038-1101(94)00267-j
Autor:
G.B. Gao, S. J. Van Nostrand, D. G. Park, S. J. Chey, Z.F. Fan, David G. Cahill, Hadis Morkoç, K. Suzue, Meng Tao, A. Botchkarev, J. Reed
Publikováno v:
Journal of Crystal Growth. 150:1275-1280
The performance of GaAs-based field-effect transistors (FETs) in switching and power applications can be enhanced substantially by employing a metal-insulator-semiconductor (MIS) structure. Attempts thus far have fallen short due to large interface t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3e0a87f0dcc8e9a90383290a7b3c17f
https://doi.org/10.1016/0022-0248(95)80144-2
https://doi.org/10.1016/0022-0248(95)80144-2
Autor:
Byungha Shin, Nestor A. Bojarczuk, Teodor K. Todorov, S. Guha, S. J. Chey, Oki Gunawan, Kejia Wang, David B. Mitzi
Publikováno v:
Applied Physics Letters. 97:143508
High efficiency Cu2ZnSnS4 solar cells have been fabricated on glass substrates by thermal evaporation of Cu, Zn, Sn, and S. Solar cells with up to 6.8% efficiency were obtained with absorber layer thicknesses less than 1 μm and annealing times in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c878ce92b909bff48d27891e1b88e0cb
https://doi.org/10.1063/1.3499284
https://doi.org/10.1063/1.3499284
Publikováno v:
Advanced Materials; May2005, Vol. 17 Issue 10, p1285-1289, 5p