Zobrazeno 1 - 10
of 180
pro vyhledávání: '"S. J. Caracci"'
Autor:
S. J. Caracci, K. C. Hsieh, C. P. Kuo, A. R. Sugg, M. G. Craford, Frederick A. Kish, J. E. Baker, John Dallesasse, Nick Holonyak, Steven A Maranowski, T. D. Osentowski, Robert M Fletcher
Publikováno v:
Journal of Electronic Materials. 21:1133-1139
Data are presented demonstrating the formation of native oxides from high Al composition In0.5(AlxGa1-x)0.5P (x≳ 0.9) by simple annealing in a “wet” ambient. The oxidation occurs by reaction of the high Al composition crystal with H2O vapor (in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b12644482412598b43f77459c783475e
https://doi.org/10.1007/bf02667606
https://doi.org/10.1007/bf02667606
Autor:
C. P. Kuo, S. J. Caracci, M. G. Craford, F. A. Kish, Nick Holonyak, K. C. Hsieh, Steven A Maranowski, Robert M Fletcher, T. D. Osentowski
Publikováno v:
Journal of Applied Physics. 71:2521-2525
Data are presented demonstrating the continuous (cw) room‐temperature (23 °C) operation of planar index‐guided ‘‘buried‐mesa’’ AlxGa1−xAs‐In0.5(AlyGa1−y)0.5P‐ In0.5Ga0.5P heterostructure visible‐spectrum laser diodes. The pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::084b792ea84b0fecde9b12fee258885f
https://doi.org/10.1063/1.351067
https://doi.org/10.1063/1.351067
Publikováno v:
Cryogenics. 30:1134-1139
This paper reports on the d.c. and high frequency characteristics of pseudomorphic AlGaAs/InGaAs/GaAs MODFETs with gate lengths from 1.73 to 0.35 μm at 300 and 110 K. Significant device improvement is shown at 110 K, with current gain cut-off freque
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::857fdc2fa34c4427333c4b492d10d273
https://doi.org/10.1016/0011-2275(90)90221-w
https://doi.org/10.1016/0011-2275(90)90221-w
Publikováno v:
Journal of Applied Physics. 75:2706-2708
Native oxidation (‘‘wet’’ oxidation via H2O vapor+N2) of InAlAs is employed to fabricate long wavelength (λ∼1.5 μm) InAlAs‐InP‐InGaAsP quantum well heterostructure laser diodes. Data are presented on gain‐guided native‐oxide‐def
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a72a4462277695afdce69648d887570
https://doi.org/10.1063/1.356200
https://doi.org/10.1063/1.356200
Autor:
S. J. Caracci, A. C. Crook, C. M. Herzinger, Michael R. Krames, T. A. DeTemple, Nick Holonyak, P.‐A. Besse
Publikováno v:
Applied Physics Letters. 63:2265-2267
Data are presented on planar waveguide S‐bends fabricated from AlxGa1−xAs‐GaAs p‐n quantum well heterostructure (QWH) laser material by a wet native oxidation process. The oxide’s low refractive index (n∼1.55) is used to define ∼3.5‐
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e128a2ee3e351e3d3b18d0555f88fd5
https://doi.org/10.1063/1.110548
https://doi.org/10.1063/1.110548
Publikováno v:
Applied Physics Letters. 63:1818-1820
Data are presented demonstrating the laser operation of an AlxGa1−xAs‐GaAs quantum well heterostructure (QWH) crystal patterned into a smoothly curved folded resonator, a ‘‘teardrop’’‐shaped resonator, with a single output facet. A deep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78e087f9230d06d9387cca191d967f04
https://doi.org/10.1063/1.110673
https://doi.org/10.1063/1.110673
Autor:
M. J. Ries, Robert D. Burnham, S. C. Smith, Nick Holonyak, Michael R. Krames, S. J. Caracci, F. A. Kish
Publikováno v:
Applied Physics Letters. 62:1006-1008
AlxGa1−xAs‐GaAs quantum well heterostructure (QWH) laser diodes with much thinner upper confining layers (0.6, 0.45, 0.3, and 0.2 μm) than usual (1–2 μm) are demonstrated. The diodes exhibit well behaved transverse far‐field patterns, low b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c02aa6711fd5cae15c914d64e6125401
https://doi.org/10.1063/1.108563
https://doi.org/10.1063/1.108563
Autor:
David W. Treat, John Dallesasse, F. A. Kish, David P. Bour, S. J. Caracci, Nick Holonyak, Steven A Maranowski
Publikováno v:
Applied Physics Letters. 61:1688-1690
Data are presented demonstrating In0.5(AlxGa1−x)0.5P quantum well heterostructure lasers with extended current‐blocking windows (∼75 μm/window) that exhibit significant improvements in output power (∼2×) compared to lasers with no windows.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::234b1eba828d384bbaa6c4a6014a1281
https://doi.org/10.1063/1.108452
https://doi.org/10.1063/1.108452
Autor:
S. C. Smith, Robert D. Burnham, F. A. Kish, Steven A Maranowski, Nick Holonyak, S. J. Caracci
Publikováno v:
Applied Physics Letters. 61:321-323
High‐performance planar ‘‘buried‐mesa’’ index‐guided AlGaAs‐GaAs quantum well heterostructure (QWH) lasers have been fabricated by oxidation (H2O vapor+N2 carrier gas, 425–525 °C) of a significant thickness of the high composition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f03749a6070f9aeb98082d49b7914d62
https://doi.org/10.1063/1.107924
https://doi.org/10.1063/1.107924
Autor:
F. A. Kish, K. C. Hsieh, S. J. Caracci, John Dallesasse, Steven A Maranowski, Nick Holonyak, G. E. Höfler
Publikováno v:
Applied Physics Letters. 60:3165-3167
The oxidation (H2O vapor+N2 carrier gas, 425–525 °C) of high‐gap AlxGa1−xAs of different doping types (p and n) is characterized by oxide depth measurements utilizing scanning electron microscopy. The conductivity type is found to affect signi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ef7f2f851aaf20b9b8ae9e05d7e604f
https://doi.org/10.1063/1.106730
https://doi.org/10.1063/1.106730