Zobrazeno 1 - 9
of 9
pro vyhledávání: '"S. J. C. H. Theeuwen"'
Autor:
S. J. C. H. Theeuwen, J.H. Qureshi
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 60:1755-1763
We show the status of laterally diffused metal-oxide-semiconductor (LDMOS) technology, which has been the device of choice for RF power applications for more than one decade. LDMOS fulfills the requirements for a wide range of class AB and pulsed app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a791edbe4f328373e272d2af2a6b8b99
https://doi.org/10.1109/tmtt.2012.2193141
https://doi.org/10.1109/tmtt.2012.2193141
Autor:
J. Caro, V. I. Kozub, R Reinder Coehoorn, K. P. Wellock, S. Radelaar, R. P. van Gorkom, Wouter Oepts, K. I. Schreurs, N. N. Gribov, S. J. C. H. Theeuwen, RM Jungblut
Publikováno v:
Journal of Applied Physics. 89:4442-4453
We study the magnetoresistance (MR) of Py/Py, Co/Py, Co/Co, Ni/Ni, and Co/Cu point contacts (Py=permalloy=Ni80Fe20). These devices are narrow constrictions or channels (diameter, length ≈30 nm) between two thin film electrodes. Due to the small siz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::125c88fabbc43cc8edd58443e18e3c04
https://doi.org/10.1063/1.1351547
https://doi.org/10.1063/1.1351547
Autor:
J. Caro, K. P. Wellock, S. J. C. H. Theeuwen, B. J. Hickey, N. N. Gribov, Frans D. Tichelaar, S. Radelaar, R. P. van Gorkom, Christopher H. Marrows
Publikováno v:
Physical Review B-Condensed Matter and Materials Physics, 60 (14)
We have studied the giant magnetoresistance ~GMR! in magnetic multilayer point contacts of three different types. The first generation contacts were made by deposition with molecular-beam epitaxy ~MBE! of an uncoupled Co/Cu multilayer on a pre-etched
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::06bdb7dbd09f7c4153e6138ff3363f55
https://doi.org/10.1103/physrevb.60.10291
https://doi.org/10.1103/physrevb.60.10291
Publikováno v:
Microelectronic Engineering. 35:317-320
We present a new process to fabricate metallic point contacts. The key feature of this process is the use of a Si membrane. Advantages of the process are i) the possibility to fabricate very small holes (down to 10 nm diameter), while the lithographi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a1d6e1330b242f5c4011cf5fdbe3aa7
https://doi.org/10.1016/s0167-9317(96)00141-4
https://doi.org/10.1016/s0167-9317(96)00141-4
Autor:
B. J. Hickey, L. Canali, S. Radelaar, Christopher H. Marrows, S. J. C. H. Theeuwen, J. Caro, Leo P. Kouwenhoven
Publikováno v:
Applied Physics Letters. 77:2370-2372
We have contacted the tip of a scanning tunneling microscope (STM) to a Co/Cu magnetic multilayer to locally measure the giant magnetoresistance (GMR) of the multilayer. Apart from a point-contact GMR, the measured MR also reflects a magnetostriction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0752f48583fe9617e99d8ba41f9ef528
https://doi.org/10.1063/1.1315634
https://doi.org/10.1063/1.1315634
Publikováno v:
Journal of Applied Physics. 85:6196-6198
We have calculated the micromagnetic structure of a Co point contact, for applied magnetic fields parallel (H∥) and perpendicular (H⊥) to the device’s electrodes. Different boundary conditions and dimensions have been examined. In most situatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6e2fad9f961431c077d31768ff1fb6f
https://doi.org/10.1063/1.370219
https://doi.org/10.1063/1.370219
Publikováno v:
Applied Physics Letters. 74:422-424
We performed micromagnetic calculations for a Permalloy point contact. The magnetization configurations show the formation of a Neel wall in the constriction. The occurrence of a Neel wall instead of a Bloch wall results from the dipole–dipole ener
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e4c8b27c48bdc46ef582ab3e28371e1
https://doi.org/10.1063/1.123048
https://doi.org/10.1063/1.123048
Autor:
Frans D. Tichelaar, B. J. Hickey, E. van der Drift, S. J. C. H. Theeuwen, T. R. de Kruijff, N. N. Gribov, J. Caro
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 16:3943
Thin silicon membranes on silicon on insulator substrates are used to fabricate point contacts with a well-defined interface in the nanoconstriction between the two metal electrodes. Transmission electron microscope images of heterointerfaces in conj
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a46ab6888d6017290b8f176221d3f13
https://doi.org/10.1116/1.590442
https://doi.org/10.1116/1.590442