Zobrazeno 1 - 10
of 18
pro vyhledávání: '"S. J. Berkowitz"'
Publikováno v:
Journal of Applied Physics. 82:2427-2434
We report the measurement and analysis of critical current (Ic) modulation and microwave response in magnetic field for a set of YBa2Cu3O7-YBa2Co0.15Cu2.85O7-YBa2Cu 3O7 ramp-edge Josephson junctions. These junctions have been fabricated with various
Publikováno v:
IEEE Transactions on Appiled Superconductivity. 7:2944-2947
We describe the fabrication of superconductor-normal metal-superconductor YBa/sub 2/Cu/sub 3/O/sub x/ (YBCO) edge junctions with a cobalt-doped YBCO barrier. The process includes an integrated high-T/sub c/ groundplane with a low /spl epsiv//sub r/ i
Publikováno v:
IEEE Transactions on Appiled Superconductivity. 7:3056-3059
We have achieved a figure-of-merit of 90/spl deg//dB from a Co-doped Superconductor-Normal-Superconductor junction series array phase shifter, with 300 junctions The maximum observed phase shift was 25/spl deg/ from a 900 junction array. The entire d
Publikováno v:
Journal of Applied Physics. 80:5483-5488
We provide two qualitative models for the operation of Josephson fluxon–antifluxon transistor based on the pendulum model and image currents induced in the junction. This device, which is a variant of a Josephson vortex flow transistor, utilizes hi
Autor:
L. R. Vale, C. D. Reintsema, David A. Rudman, R.E. Thomson, Nancy A. Missert, Ronald H. Ono, S. J. Berkowitz
Publikováno v:
IEEE Transactions on Appiled Superconductivity. 5:2969-2972
We compare the electrical transport properties of superconductor-normal metal-superconductor SNS step-edge YBCO/Au junctions where the Au is deposited at 100/spl deg/C and 600/spl deg/C. For both types of junctions we observe resistively shunted junc
Publikováno v:
Minerva pediatrica. 63(3)
The development and evaluation of early preventative interventions for individuals exposed to a potentially traumatic event (PTE) have been increasing in number and sophistication over the last decade. Evaluation of early interventions for individual
Publikováno v:
Journal of Applied Physics. 71:4933-4943
GaN films have been epitaxially grown onto (001) Si by electron cyclotron resonance microwave‐plasma‐assisted molecular‐beam epitaxy, using a two‐step growth process, in which a GaN buffer is grown at relatively low temperatures and the rest
Publikováno v:
Applied Physics Letters. 69:3257-3259
We have realized the Josephson fluxon–antifluxon transistor (JFAT) in high temperature superconductivity using an asymmetric control line on top of either bicrystal junctions or Co‐doped YBa2Cu3Ox superconductor–normal–superconductor (SNS) ju
Publikováno v:
Applied Physics Letters. 68:3808-3810
We have demonstrated a multilayer high‐Tc junction process capable of fabricating small‐scale digital circuits. The process uses superconductor/normal–metal/superconductor YBa2Cu3Ox (YBCO) edge junctions with a cobalt‐doped YBCO barrier and a
Autor:
A. M. Clark, R. Moerman, Alexana Roshko, W. J. Skocpol, E. I. De Obaldia, Ronald H. Ono, Karl F. Ludwig, Leila R. Vale, S. J. Berkowitz, David A. Rudman, P. M. Mankiewich
Publikováno v:
Applied Physics Letters. 65:3395-3397
High quality films of YBa2Cu3O7−δ on LaAlO3 have been grown by pulsed‐laser deposition at oxygen pressures of 3.4–54 Pa (25–400 mTorr). X‐ray diffraction reveals the coexistence of grains that align with the substrate axes (axial grains) a