Zobrazeno 1 - 10
of 59
pro vyhledávání: '"S. Iwade"'
Autor:
S. Iwade, Hiroshi Makino, Y. Yamagami, Koji Nii, A. Shibayama, Yasumasa Tsukamoto, Toshikazu Suzuki, S. Imaoka, T. Yoshizawa
Publikováno v:
IEEE Journal of Solid-State Circuits. 39:684-693
In sub-100-nm generation, gate-tunneling leakage current increases and dominates the total standby leakage current of LSIs based on decreasing gate-oxide thickness. Showing that the gate leakage current is effectively reduced by lowering the gate vol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c24d7182b8aa1af4ab75792a911a4e78
https://doi.org/10.1109/jssc.2004.825235
https://doi.org/10.1109/jssc.2004.825235
Autor:
Y. Matsuda, H. Sato, A. Yamada, A. Mohri, T. Nakajima, T. Takagaki, T. Kanamoto, S. Iwade, T. Watanabe, H. Takata, Y. Horiba
Publikováno v:
IEEE Micro. 19:38-47
MPEG-2 decoding and encoding are important applications for multimedia systems. Real-time capability and low-cost implementation are the main design considerations for these systems. Due to the high computational requirements of real-time application
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b4b4895d2795e263b4727282d6b9ecb
https://doi.org/10.1109/40.782566
https://doi.org/10.1109/40.782566
Publikováno v:
IEEE Journal of Solid-State Circuits. 30:316-320
A novel memory cell circuit for multiport RAM on CMOS Sea-of-Gates (SOG) has been proposed. It contributes to the operation both at high speed and at low voltage. In addition, a fourfold read bit line technique is also proposed to reduce the access t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c6c34a2edf2a6a95ba04bf2562aca5a
https://doi.org/10.1109/4.364448
https://doi.org/10.1109/4.364448
Autor:
S. Iwade, S. Kayano, Hisashi Matsumoto, Y. Tsujihashi, M. Sakao, Osamu Kitada, H. Hishimaki, H. Nakao, A. Miyanishi
Publikováno v:
IEEE Journal of Solid-State Circuits. 29:2-8
This paper describes a newly developed module generator for cell-based design which generates a data-path layout comparable to a handcrafted one both in speed and in transistor density. The chip designer enters his schematic data-path diagram using t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15d8d5594ec715db4e3b3134dc2d6b45
https://doi.org/10.1109/4.272088
https://doi.org/10.1109/4.272088
Publikováno v:
IEEE Transactions on Electron Devices. 38:1131-1135
A multispectral linear array has been developed for remote-sensing applications in the short-wavelength (SW) infrared (IR) band. The device is a monolithic quadruple-band image sensor, consisting of 4096 detectors for each band. The SW-IR sensor uses
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f21445dca579ee7884ca5f31765d759
https://doi.org/10.1109/16.78389
https://doi.org/10.1109/16.78389
Publikováno v:
1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bf80d8b94912e0655d562a2fb77e2d7
https://doi.org/10.1109/isscc.1987.1157233
https://doi.org/10.1109/isscc.1987.1157233
Publikováno v:
2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408).
We proposed a push-pull output buffer that maintains the data transmission rate for lower supply voltages. It operates at an internal supply voltage (VDD) of 0.7-1.6 V and an interface supply voltage (VDDX) of 1.0-3.6 V. In low VDDX operation, the ou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::917b70824e229c76dce98dcbb40a520b
https://doi.org/10.1109/vlsic.2003.1221216
https://doi.org/10.1109/vlsic.2003.1221216
Autor:
Y. Yamagami, Y. Tenoh, T. Suzuki, A. Shibayama, T. Yoshizawa, K. Nii, Hiroshi Makino, S. Iwade, Yasumasa Tsukamoto, S. Imaoka
Publikováno v:
2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408).
In sub 100 nm generation, gate tunneling leak current increases and dominates total standby leak current of LSI based on decreasing gate oxide thickness. We propose reducing gate leak current in SRAM using Local DC Level Control (LDLC) and an Automat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e83eecf2d6782ff1844d48783144f5d
https://doi.org/10.1109/vlsic.2003.1221217
https://doi.org/10.1109/vlsic.2003.1221217
Publikováno v:
Proceedings of IEEE Custom Integrated Circuits Conference - CICC '94.
A multi-port RAM generator for 0.5 /spl mu/m CMOS Sea-of-Gates (SOG) has been developed. 2-port or 3-port RAMs with flexible bit-word configurations are available. In order to operate either at a low supply voltage or at high speed, a novel memory ce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26203e1506355775a9961f9250f8806e
https://doi.org/10.1109/cicc.1994.379635
https://doi.org/10.1109/cicc.1994.379635
Publikováno v:
1987 International Electron Devices Meeting.
An iridium silicide Schottky-barrier (IrSi SB) infrared image sensor with 512×512 pixels has been developed. The Charge Sweep Device architecture is applied to the device. The detector is an IrSi/p-Si SB diode, which has a cutoff wavelength of 7.3µ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::096e175d8cc1d8eb11f57c064343d65d
https://doi.org/10.1109/iedm.1987.191366
https://doi.org/10.1109/iedm.1987.191366