Zobrazeno 1 - 10
of 30
pro vyhledávání: '"S. Ishidzuka"'
Autor:
Y. Igari, Toshihiro Ando, Isao Kusunoki, M. Sakai, Tomohide Takami, M Nishitani-Gamo, S. Ishidzuka, Tsuyoshi Takaoka
Publikováno v:
Surface Science. 492:315-328
Diamond (CVD) and graphite (HOPG) samples were nitrided at room temperature by irradiation with 300–700 eV N2+ ion beams. X-ray photoelectron spectra (XPS) were recorded in situ during the nitridation. The XPS spectra of C1s and N1s core levels are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbad01f029eeffd5f5bbaf599edf4340
https://doi.org/10.1016/s0039-6028(01)01430-3
https://doi.org/10.1016/s0039-6028(01)01430-3
Autor:
Mikka Nishitani-Gamo, Tsuyoshi Takaoka, Toshihiro Ando, Y. Igari, Isao Kusunoki, S. Ishidzuka, Tomohide Takami
Publikováno v:
Diamond and Related Materials. 10:1676-1680
A homoepitaxially grown p-type diamond (001) surface was nitrided by irradiation with a 500-eV N + 2 ion beam. X-Ray photoelectron spectra (XPS) were taken in situ during the nitridation. The C1s and N1s XPS spectra were divided into three (A, ∼ 28
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13e146ee8efd8ad91948e475914d1778
https://doi.org/10.1016/s0925-9635(01)00394-6
https://doi.org/10.1016/s0925-9635(01)00394-6
Publikováno v:
Applied Surface Science. :300-304
A 3C-silicon carbide (SiC) thin film grown on a Si(1 0 0) surface using an ethylene (C2H4) molecular beam has been studied by atomic force microscopy. At the center of the irradiation area of the ethylene beam, the shape of the SiC islands was rectan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f10db9e7ce5f073176bbb60d868a7496
https://doi.org/10.1016/s0169-4332(00)00678-4
https://doi.org/10.1016/s0169-4332(00)00678-4
Publikováno v:
Thin Solid Films. 376:89-98
The reaction of acetone with Si(111) surface between 750 and 900°C has been investigated by reflection high-energy electron diffraction (RHEED), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS). From RHEED observation,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cd1750b99f78e78afd58ce4d2d4b059
https://doi.org/10.1016/s0040-6090(00)01358-4
https://doi.org/10.1016/s0040-6090(00)01358-4
Autor:
Mikka Nishitani-Gamo, Toshihiro Ando, Tsuyoshi Takaoka, Y. Igari, S. Ishidzuka, M. Sakai, Isao Kusunoki, Tomohide Takami
Publikováno v:
Diamond and Related Materials. 9:698-702
Diamond samples grown on Si substrates by chemical vapor deposition were nitrided at room temperature by irradiation of 300–700 eV N + 2 ion beams. The C 1s and N 1s XPS spectra were taken during nitridation and after annealing in ultrahigh vacuum.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e04595d7e6830a0411483673f60308aa
https://doi.org/10.1016/s0925-9635(99)00253-8
https://doi.org/10.1016/s0925-9635(99)00253-8
Publikováno v:
Surface Science. :167-171
A clean Si(100) surface at 670°C in ultrahigh vacuum was irradiated with a C2H4 molecular beam produced from a nozzle at 900°C. The reaction products on the surface were investigated using X-ray photoelectron spectroscopy, reflection high-energy el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8f5792273bc87bfd474f2f7252bfef6
https://doi.org/10.1016/s0039-6028(99)00057-6
https://doi.org/10.1016/s0039-6028(99)00057-6
Publikováno v:
Applied Surface Science. :107-111
The nitridation of a Si(100) surface with a NH3 beam at temperatures between 600 and 900°C was studied using X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). Thicker film was formed at higher temperature. The compositio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2033dc43e7dbfdb1ee0642abec785816
https://doi.org/10.1016/s0169-4332(98)00034-8
https://doi.org/10.1016/s0169-4332(98)00034-8
Publikováno v:
Surface Review and Letters. :81-84
Nitridation of a Si(100) surface takes place with NH3 at temperatures higher than 600°C and with a low energy [Formula: see text] ion beam at room temperature, formating a thin film of nitride. The nitridation processes have been studied in situ und
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0f79496e753e69093f29201ece541ac
https://doi.org/10.1142/s0218625x98000177
https://doi.org/10.1142/s0218625x98000177
Publikováno v:
Surface Science. 380:131-144
The reactions of Si(100) and (111) surfaces with a C 2 H 4 beam in ultrahigh vacuum were studied using high resolution X-ray photoelectron spectroscopy (XPS) at temperatures of 600–900°C. These reactions produce silicon carbide (SiC) layers on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bf2d43ea00257b174b04c1700a04792
https://doi.org/10.1016/s0039-6028(97)00007-1
https://doi.org/10.1016/s0039-6028(97)00007-1
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