Zobrazeno 1 - 10
of 120
pro vyhledávání: '"S. I. Radautsan"'
Publikováno v:
Crystal Research and Technology. 31:307-314
Raman and infrared reflectivity spectra of CdInGaS 4 , CdIn 2 S 4 , HgInGaS 4 , and CdIn 2 S 2 Se 2 crystals have been investigated. The fundamental phonon parameters, the limiting dielectric constants e 0 and E∞ and the reflectivity spectrum conto
Publikováno v:
Acta Physica Hungarica. 74:161-165
Strong interaction between residual donor impurities and radiation defects was evidenced by studying the photoluminescence spectra of bound excitons in fast-electron (E=4 MeV) irradiated n-InP epilayers. A diminution of the conductivity compensation
Publikováno v:
Physica Status Solidi (a). 139:523-529
The influence of fast-electron (E = 3.5 to 4 MeV) irradiation upon photoluminescence (PL) spectra of nominally undoped n-InP epilayers is investigated. The broad PL band with complex structure in the range 1.39 to 1.40 eV is shown to consist of three
Publikováno v:
physica status solidi (b). 162:K63-K66
L'isoperiodicite des cations dans ZnGaH 2 Se 4 conduit a un elargissement plus important des bandes de diffusion Raman par rapport a CdGa 2 Se 4 . Ceci rend vrai les modes optiques a l'exception du mode de «breathing». Ce dernier se distingue par u
Publikováno v:
Crystal Research and Technology. 25:K78-K81
Publikováno v:
physica status solidi (b). 158:K63-K67
Publikováno v:
1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings.
The activation efficiency of zinc impurity co-implanted with P/sup +/ and As/sup +/ ions in InP was studied by Hall-effect measurements. Both P/sup +/ and As/sup +/ co-implantations followed by post-implantation annealing at 400 to 600/spl deg/C in I
Publikováno v:
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351).
The optical absorption spectra of Zn/sub 3/In/sub 2/S/sub 6/, Zn/sub 3/InGaS/sub 6/ and Zn/sub 3/InAlS/sub 6/ monocrystals obtained by iodide transportation have been investigated within the temperature range between 80 K and 300 K. The analysis of t
Publikováno v:
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings.
The paper presents the results of investigation of photovaricaps based on Pt-ZnIn/sub 2/S/sub 4/ (CdGaInS/sub 4/) with the working spectral region corresponding to the impurity band of absorption. The parameters of the (10/sup 3/ Hz) photovaricaps ha
Publikováno v:
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings.
In this work, the wavelength derivative reflection (WDR) spectra of CuIn/sub 1-x/Ga/sub x/S/sub 2/ crystals have been investigated in the region of A, B and C series. The n=1, n=2 and n=3 states are determined and contours of exciton lines (n=1) are