Zobrazeno 1 - 10
of 32
pro vyhledávání: '"S. I. Pokutnyi"'
Autor:
S. I. Pokutnyi, P. P. Gorbyk
Publikováno v:
Успехи физики металлов, Vol 14, Iss 4, Pp 353-378 (2013)
A given review article summarizes the results of theoretical studies of artificial atom (or superatom)—nanodimensional quasi-atomic structure with the spatially separated electron and hole (hole is located within the semiconductor quantum dot (QD),
Externí odkaz:
https://doaj.org/article/84d4334b1df043f78ec008fc26033bf2
Autor:
N. G. Shkoda, S. I. Pokutnyi
Publikováno v:
Himia, Fizika ta Tehnologia Poverhni. 12:306-313
It is shown that electron tunneling through a potential barrier that separates two quantum dots of germanium leads to the splitting of electron states localized over spherical interfaces (a quantum dot – a silicon matrix). The dependence of the spl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f18b80d3acea194d920fe72624b5fef8
https://doi.org/10.15407/hftp12.04.306
https://doi.org/10.15407/hftp12.04.306
Autor:
S. I. Pokutnyi
Publikováno v:
Surface. 11:472-483
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd26f89f744bae8b69b04d078633626c
https://doi.org/10.15407/surface.2019.11.472
https://doi.org/10.15407/surface.2019.11.472
Publikováno v:
Semiconductors. 53:2045-2048
The optical properties of dielectric nanostructures strongly depend on dielectric nanoparticles (NP) polarizability which can take the high values even interacting with low-intensity radiation. In this article, we are trying to find out if this is po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f970dce113167b6bf949d260023a3508
https://doi.org/10.1134/s1063782619120212
https://doi.org/10.1134/s1063782619120212
Autor:
S. I. Pokutnyi, N. G. Shkoda
Publikováno v:
Himia, Fizika ta Tehnologia Poverhni. 10:149-153
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ac87c62f7351979667f974c6416d2f4
https://doi.org/10.15407/hftp10.02.149
https://doi.org/10.15407/hftp10.02.149
Autor:
S. I. Pokutnyi
Publikováno v:
Low Temperature Physics. 44:819-823
It is shown that taking into account the centrifugal energy in the Hamiltonian of an exciton with spatially separated electron and hole (the hole moves in the germanium quantum dot and the electron is localized over the spherical interface of the sil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::554f5eb1ddcd0110f53eb8268b044103
https://doi.org/10.1063/1.5049165
https://doi.org/10.1063/1.5049165
Autor:
S. I. Pokutnyi
Publikováno v:
Low Temperature Physics. 42:1151-1154
There is a significant increase in the binding energy between the exciton's space-separated electrons and holes (the hole moves across the volume of the quantum dot, and the electron is localized on a spherical surface of the quantum dot-matrix inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f03e637510efb8a6c6af199747a4b90
https://doi.org/10.1063/1.4973506
https://doi.org/10.1063/1.4973506
Publikováno v:
Himia, Fizika ta Tehnologia Poverhni. 7:285-294
In nanoheterostructures promising for the implementation of effective sources of visible and near-infrared radiation, there are self-assembled structures with ZnSe nanoislands. To create new efficient optoelectronic devices on the basis of heterostru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dd7a66d87e9bd8c74b73947db93957c
https://doi.org/10.15407/hftp07.03.285
https://doi.org/10.15407/hftp07.03.285
Publikováno v:
Semiconductors. 49:1311-1315
It is found that the binding energy of the ground state of an exciton formed from an electron and a hole spatially separated from each other (the hole is moving within a quantum dot, and the electron is localized above the spherical (quantum dot)–(
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63d35c0ac1b7c25efe9d0ffa7d04455d
https://doi.org/10.1134/s1063782615100218
https://doi.org/10.1134/s1063782615100218
Autor:
S. I. Pokutnyi
Publikováno v:
Sensor Electronics and Microsystem Technologies. 1:3-7
Приводиться теоретичний аналіз можливості використання переходів важкої дірки між еквідистантною серією рівнів у адіабатичному потен
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f58d449764464f1f9fa43e7227e9fa3b
https://doi.org/10.18524/1815-7459.2004.2.111881
https://doi.org/10.18524/1815-7459.2004.2.111881