Zobrazeno 1 - 10
of 15
pro vyhledávání: '"S. I. Molina"'
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-8 (2018)
Abstract The Bi content in GaAs/GaAs1 − x Bi x /GaAs heterostructures grown by molecular beam epitaxy at a substrate temperature close to 340 °C is investigated by aberration-corrected high-angle annular dark-field techniques. The analysis at low
Externí odkaz:
https://doaj.org/article/96b06adae5e6483eb458bc90a2bc8029
Autor:
S. Valdueza-Felip, A. Núñez-Cascajero, R. Blasco, D. Montero, L. Grenet, M. de la Mata, S. Fernández, L. Rodríguez-De Marcos, S. I. Molina, J. Olea, F. B. Naranjo
Publikováno v:
AIP Advances, Vol 8, Iss 11, Pp 115315-115315-7 (2018)
We report the influence of the AlN interlayer thickness (0-15 nm) on the photovoltaic properties of Al0.37In0.63N on Si heterojunction solar cells deposited by radio frequency sputtering. The poor junction band alignment and the presence of a 2-3 nm
Externí odkaz:
https://doaj.org/article/4ab9abdfaf944c4b820965cc8a734e34
Publikováno v:
Microscopy of Semiconducting Materials 2001 ISBN: 9781351074629
Microscopy of Semiconducting Materials 2001
Microscopy of Semiconducting Materials 2001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c6ba36f823e5a2e6bc7d6bc792f05c7
https://doi.org/10.1201/9781351074629-70
https://doi.org/10.1201/9781351074629-70
Publikováno v:
Journal of Arid Environments. 42:29-42
The ground-dwelling insect community associated with semi-arid chaco forest in the Chancani Natural Park and Forest Reserve (Cordoba, central Argentina) was studied from pitfall trap collections. The taxonomic composition and functional structure of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36586bf2dfba8d3a14c8f79bee3a403e
https://doi.org/10.1006/jare.1999.0498
https://doi.org/10.1006/jare.1999.0498
Autor:
B. Alén, D. Fuster, G. Muñoz-Matutano, P. Alonso-González, J. Canet-Ferrer, J. Martínez-Pastor, I. Fernández-Martínez, M. Royo, J. I. Climente, Y. González, F. Briones, D. Hernández, S. I. Molina, L. González, Jisoon Ihm, Hyeonsik Cheong
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
instname
instname
Trabajo presentado a la 30th International Conference on the Physics of Semiconductors, celebrada en Seul (Korea) del 25 al 30 de Julio de 2010.
The emission properties of lateral and vertical QD pairs grown on GaAs nanoholes are investigated. V
The emission properties of lateral and vertical QD pairs grown on GaAs nanoholes are investigated. V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9abc8b4078f2df305709f9abe74337cd
http://hdl.handle.net/10261/103415
http://hdl.handle.net/10261/103415
Autor:
Atif A Khan, E Repiso, M Herrera, P J Carrington, M de la Mata, J Pizarro, A Krier, S I Molina
Publikováno v:
Nanotechnology; 3/6/2020, Vol. 31 Issue 10, p1-1, 1p
Autor:
Atif A Khan, M Herrera, N Fernández-Delgado, D F Reyes, J Pizarro, E Repiso, A Krier, S I Molina
Publikováno v:
Nanotechnology; 1/10/2020, Vol. 31 Issue 2, p1-1, 1p
Autor:
N Fernández-Delgado, M Herrera, F J Delgado, A H Tavabi, M Luysberg, R E Dunin-Borkowski, E J Juárez-Pérez, B Clasen Hames, I Mora-Sero, I Suárez, J P Martínez-Pastor, S I Molina
Publikováno v:
Nanotechnology; 3/29/2019, Vol. 30 Issue 13, p1-1, 1p