Zobrazeno 1 - 10
of 100
pro vyhledávání: '"S. Hymes"'
Publikováno v:
International Journal of Mental Health and Addiction.
This qualitative study aimed to capture the lived experiences of first responders (FRs) combatting the opioid epidemic in an effort to better understand how the increase in opioids, opioid-related harm, and opioid-related death has affected the FR pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23f34a395bff19bab4cdb7b8f6f20ce0
https://doi.org/10.1007/s11469-022-00993-w
https://doi.org/10.1007/s11469-022-00993-w
Akademický článek
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Akademický článek
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Publikováno v:
Journal of Applied Physics. 83:4507-4512
Copper thin films were exposed to a dilute silane mixture at temperatures in the range of 190–363 °C. The resulting silicide surface layers were characterized by four-point probe, Rutherford backscattering spectrometry, and x-ray diffraction. A de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e77b92a8301fc5f4ec17426238379b4
https://doi.org/10.1063/1.367235
https://doi.org/10.1063/1.367235
Publikováno v:
Chemical Engineering Communications. :253-259
Annealed thin films of Cu/Mg/SiO2 are studied as possible conductors for microelectronics. Rutherford backscattering and sheet resistance measurements show that vacuum annealing at 350-400°C results in transport of Mg from the buried layer to the su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa1fe4c3c07e1cb8fe26aa6f360860d2
https://doi.org/10.1080/00986449608936566
https://doi.org/10.1080/00986449608936566
Publikováno v:
Thin Solid Films. 262:234-241
The doping of copper with Al and Mg is discussed as a method of passivating the exposed surface of copper films proposed for use as a conductor in microelectronics. Doping by co-deposition and by diffusion from Cu/M/SiO2 bilayers, where M = Al or Mg,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fe9802ea75880953b50569a94ee6de2
https://doi.org/10.1016/0040-6090(95)05837-0
https://doi.org/10.1016/0040-6090(95)05837-0
Publikováno v:
Journal of Applied Physics. 75:3627-3631
The properties of thin films of Cu with 1 at. % Al are explored. As‐deposited films of Cu(1 at. % Al) oxidize orders of magnitude more slowly than do those of pure Cu. After Cu(1 at. % Al) films are annealed in Ar at 400 °C for 30 min, very thin p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2b34b12c5dbbb04a2baf56c283c7cad
https://doi.org/10.1063/1.356075
https://doi.org/10.1063/1.356075
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 85:260-263
Ion implantation is an effective way to passivate copper films. The present work was designed to refine our understanding of the mechanisms which lead to this result. The oxidation of B implanted copper and copper oxide (Cu2O) was studied. It was fou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a5e4a3de5c1b7c7c88f4bf9a60dd357
https://doi.org/10.1016/0168-583x(94)95823-8
https://doi.org/10.1016/0168-583x(94)95823-8
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 85:167-170
The use of the Albany MeV rastered microbeam to study lateral diffusion of interest to microelectronics is discussed. As an illustration of this technique, a study is presented of the lateral transport that occurs near the edge of a Ni film deposited
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62ed3843eef3ccce214bd33bac114833
https://doi.org/10.1016/0168-583x(94)95807-6
https://doi.org/10.1016/0168-583x(94)95807-6
Publikováno v:
Journal of Applied Physics. 74:1331-1334
Ion implantation can be used effectively to passivate copper. The effect of B ion implantation on the oxidization rate of copper is studied as a function of B energy and dose. The increase of sheet resistance associated with ion implantation damage a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf9e570214a053b7f66fbcace24f21c8
https://doi.org/10.1063/1.354913
https://doi.org/10.1063/1.354913