Zobrazeno 1 - 10
of 84
pro vyhledávání: '"S. Hommel"'
Autor:
Spiros D. Dimitratos, Allison S. Hommel, Kenneth D. Konrad, Lauren M. Simpson, Jessica J. Wu-Woods, Daniel F. Woods
Publikováno v:
Biosensors, Vol 9, Iss 2, p 62 (2019)
In the developing world, the identification of clean, potable water continues to pose a pervasive challenge, and waterborne diseases due to fecal contamination of water supplies significantly threaten public health. The ability to efficiently monitor
Externí odkaz:
https://doaj.org/article/58b7486b11124a8bb4256f8e3d1c549c
Publikováno v:
Microelectronics Reliability. 92:179-181
Trapping effects are playing an essential role in semiconductor devices. The localization of trapping effects with a high spatial resolution can provide valuable information on the interface and oxide quality in state of the art semiconductor devices
Publikováno v:
Microelectronics Reliability. :218-221
The investigation of dopant distribution in discrete and highly integrated electronic devices is the main application of Scanning Microwave Microscopy in the semiconductor industry. To reliably determine the dopant type and the relation between diffe
Autor:
Daniel F. Woods, Kenneth D. Konrad, Jessica J. Wu-Woods, Lauren M. Simpson, Spiros D. Dimitratos, Allison S. Hommel
Publikováno v:
Biosensors
Volume 9
Issue 2
Biosensors, Vol 9, Iss 2, p 62 (2019)
Volume 9
Issue 2
Biosensors, Vol 9, Iss 2, p 62 (2019)
In the developing world, the identification of clean, potable water continues to pose a pervasive challenge, and waterborne diseases due to fecal contamination of water supplies significantly threaten public health. The ability to efficiently monitor
Publikováno v:
2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Trapping effects are playing an essential role in semiconductor devices. The localization of trapping effects with a high spatial resolution can provide valuable information on the interface and oxide quality in state of the art semiconductor devices
Autor:
O. Haeberlen, Thomas Schweinboeck, N. Killat, D. Schmitt-Landsiedel, S. Hommel, Marco Silvestri, A. Altes
Publikováno v:
Microelectronics Reliability. 64:310-312
Probing electrical properties of state-of-the-art electronic devices is one of the key features of Scanning Microwave Microscopy. While providing valuable information on charge carrier properties, the combination of an atomic force microscope cantile
Autor:
M. Bodach, Philipp Werler, F. Bilsing, S. Hommel, Sven Leonhardt, F. Demmler, L. Zacharias, C. Blumhagen
Publikováno v:
SmartWorld/SCALCOM/UIC/ATC/CBDCom/IOP/SCI
The presented project report will show the problems and synergy effects between the rising of electric mobility and renewable energies on a local power grid. The implemented redox flow storage system was used to balance the local energy production an
Autor:
Jean-Nicolas Dacher, J.B. Roset, Céline Savoye-Collet, Edith Koning, S. Hommel, Cloé Charpentier, E. Lerebours, Guillaume Savoye
Publikováno v:
European Radiology. 22:1963-1971
To evaluate the ability of MR colonography (MRC) to detect lesions in severe attacks of ulcerative colitis (UC) and to assess its concordance with rectosigmoidoscopy. Eighteen patients underwent MRC and rectosigmoidoscopy. MRC consisted of a water-fi
Akademický článek
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Autor:
A. Altes, Thomas Schweinboeck, Matthias A. Fenner, S. Hommel, Ferry Kienberger, Giorgio Badino, Silviu-Sorin Tuca, Enrico Brinciotti, Georg Gramse, Manuel Kasper, Juergen Smoliner
Publikováno v:
Nanoscale. 7(35)
We present a new method to extract resistivity and doping concentration of semiconductor materials from Scanning Microwave Microscopy (SMM) S11 reflection measurements. Using a three error parameters de-embedding workflow, the S11 raw data are conver