Zobrazeno 1 - 10
of 43
pro vyhledávání: '"S. Hausser"'
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 16:181-186
During the qualification of a 0.35-/spl mu/m CMOS process, it was observed that diffusion resistors showed a systematic mismatch, depending on the position on the wafer. The mismatch increased from the center of the wafer to the outer regions. Variou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e22debe8d98dae29e940c9b3dc0cfb7
https://doi.org/10.1109/tsm.2003.811584
https://doi.org/10.1109/tsm.2003.811584
Publikováno v:
Microelectronic Engineering. 21:345-348
We have investigated the etching characteristics of InAlAs for reactive ion etching (RIE) with mixtures of argon (Ar) and chlorine (Cl 2 ). Nearly vertical walls and a smooth surface morphology can be achieved for etch rates of up to 200 nm/min. For
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::247b1dfafd867c52d61098ffee9cd61c
https://doi.org/10.1016/0167-9317(93)90088-m
https://doi.org/10.1016/0167-9317(93)90088-m
Publikováno v:
Journal of Crystal Growth. 127:165-168
We report on growth investigations and results of low threshold current density GaInAsP/InP multiple quantum well (MQW) lasers emitting at a wavelength of 1.3 μm. Bulk layers and separate confinement heterostructure MQW laser diodes were grown by ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d9daaf7862b9ccb66a6928a9907a99f
https://doi.org/10.1016/0022-0248(93)90597-p
https://doi.org/10.1016/0022-0248(93)90597-p
Autor:
G. Blackham, P. Scarfield, K.H. Kraft, M. Barton, B. Meerschman, M. Vermandel, K. Van Belle, José Manuel Otón, Przemysław Kula, Dieter Cuypers, Morten Andreas Geday, A. Van Calster, Tomas Podprocky, H. De Smet, B. Maximus, X. Quintana, G. Van Doorselaer, S. Hausser, Roman Dabrowski, Noureddine Bennis, K. Murray
Publikováno v:
2007 Spanish Conference on Electron Devices, Proceedings
ResearcherID
ResearcherID
Liquid crystal on silicon (LCOS) combines two very well-known technologies, namely the IC/CMOS and the liquid crystal (LC) technologies. As both of these are very mature, it is obvious that LCOS has a huge potential for very high-end applications, mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cce54530cba4061ce5b5c3c7dbc3489d
https://biblio.ugent.be/publication/441167/file/449943
https://biblio.ugent.be/publication/441167/file/449943
Publikováno v:
13th IEEE International Semiconductor Laser Conference.
We demonstrate 1300 nm SCH quantum well lasers grown by CBE with low threshold and high efficiency. Spontaneous emission measurements of these lasers indicate strong carrier leakage. This reduces To to values around 55 K. Recently, 1300 nm InGaAsP/In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2209f255d910e3a2da1ad6c6929c900f
https://doi.org/10.1109/islc.1992.763649
https://doi.org/10.1109/islc.1992.763649
Publikováno v:
Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002..
During the qualification of a 0.35/spl mu/m CMOS process, it was observed that diffusion resistors showed a systematic mismatch, depending on the position on the wafer. The mismatch increased from the center of the wafer to the outer regions. Various
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b217d4e8e1173e8e2b12c96a7e729b7
https://doi.org/10.1109/icmts.2002.1193204
https://doi.org/10.1109/icmts.2002.1193204
Publikováno v:
Applied Physics Letters. 56:913-915
We report the determination of Auger recombination coefficients in bulk and quantum well InGaAs by time‐resolved luminescence measurements. In bulk InGaAs the coefficient is C=3.2×10−28 cm6/s and has the temperature dependence of the valence‐b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53ab51dfb39b18b56270b5d18b6d1454
https://doi.org/10.1063/1.103175
https://doi.org/10.1063/1.103175
Autor:
S. Subbanna, H. Schweizer, E. Zielinski, G. Griffiths, M.H. Pilkuhn, S. Hausser, H. Kroemer, R. Stuber
Publikováno v:
IEEE Journal of Quantum Electronics. 23:977-982
The material system GaSb/AlSb is discussed with respect to laser applications. Optical gain measurements reveal that in GaSb/AlSb multiquantum well heterostructures, energy-dependent resonant loss mechanisms such as intervalence band absorption and A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a48f82f906a0ba29a891204c5e197803
https://doi.org/10.1109/jqe.1987.1073451
https://doi.org/10.1109/jqe.1987.1073451
Publikováno v:
IEEE Journal of Quantum Electronics. 23:969-976
Important laser parameters of GaAs/AlGaAs MQWH's were measured by means of optical gain spectroscopy. Unsaturated optical net gain spectra are carefully analyzed using a model for band-to-band transitions including momentum conservation and an energy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f10860fb2093fbd6f45d4e8b0b943090
https://doi.org/10.1109/jqe.1987.1073463
https://doi.org/10.1109/jqe.1987.1073463
Publikováno v:
IEEE Journal of Quantum Electronics. 21:719-725
An excellent quantitative description of the temperature dependence of the laser threshold current density and of the relevant T o value of GaInAsP/InP 1.3 μm lasers has been reached by independent measurements of the recombination coefficients and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc6902008e72958873160ec764eb933c
https://doi.org/10.1109/jqe.1985.1072716
https://doi.org/10.1109/jqe.1985.1072716