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pro vyhledávání: '"S. H. M. Greiner"'
Autor:
S. H. M. Greiner, A. V. Nenashev, S. D. Baranovskii, Florian Gebhard, J. O. Oelerich, A. V. Dvurechenskii
Publikováno v:
Physical Review B. 100
The charge transport mechanism in amorphous oxide semiconductors (AOS) is a matter of controversial debates. Most theoretical studies so far neglected the percolation nature of the phenomenon. In this article, a recipe for theoretical description of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6063e623d58c86dde84748f82c8fe6ce
https://doi.org/10.1103/physrevb.100.125202
https://doi.org/10.1103/physrevb.100.125202
Autor:
S. H. M. Greiner, S. D. Baranovskii, A. V. Nenashev, J. O. Oelerich, Florian Gebhard, A. V. Dvurechenskii
Publikováno v:
EPL (Europhysics Letters). 127:57004
Charge transport in amorphous oxide semiconductors is often described as the band transport affected by disorder in the form of random potential barriers (RB). Theoretical studies in the framework of this approach neglected so far the percolation nat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ce4fc5fb7f644ff323b6e32205c839a9
https://doi.org/10.1209/0295-5075/127/57004
https://doi.org/10.1209/0295-5075/127/57004
Autor:
S. D. Baranovskii, A. V. Nenashev, J. O. Oelerich, S. H. M. Greiner, A. V. Dvurechenskii, F. Gebhard
Publikováno v:
Europhysics Letters; Sep2019, Vol. 127 Issue 5, p1-1, 1p