Zobrazeno 1 - 2
of 2
pro vyhledávání: '"S. H. Kleckley"'
Autor:
E.W. Nelson, William G. Vernetson, Andrei V. Muravjov, Elena Flitsiyan, Robert E. Peale, T. W. Du Bosq, C. J. Fredricksen, M. V. Dolguikh, S. H. Kleckley
Publikováno v:
Journal of Applied Physics. 96:1-6
A far-infrared p-type germanium laser with active crystal prepared from ultra pure single-crystal Ge by neutron transmutation doping (NTD) is demonstrated. Calculations show that the high uniformity of Ga acceptor distribution achieved by NTD signifi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::276a32db45dbfa5129108dd79969da38
https://doi.org/10.1063/1.1753659
https://doi.org/10.1063/1.1753659
Autor:
E.W. Nelson, William G. Vernetson, A. V. Muravjov, V. Z. Tsipin, M. V. Dolguikh, S. H. Kleckley, Robert E. Peale, Elena Flitsiyan
Publikováno v:
SPIE Proceedings.
A neutron transmutation doped (NTD) far-infrared p-Ge laser crystal and a melt-grown p-Ge laser are analyzed and compared. Though the doping level in the NTD active crystal is twice lower than optimal, the laser performance is comparable to that prod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b043f4ed803821dd5d2a6f5792adacb0
https://doi.org/10.1117/12.485798
https://doi.org/10.1117/12.485798