Zobrazeno 1 - 10
of 39
pro vyhledávání: '"S. Graubner"'
Autor:
S. Graubner, David Hartung, R. Hamann, Peter J. Klar, P. Hoffmann, Martin Becker, C. Voget-Grote, Angelika Polity, Carsten Ronning
Publikováno v:
Journal of Applied Physics. 125:085703
Two series of SnO thin films, one doped with N and one doped with H, were deposited on c-plane sapphire by reactive ion beam sputter deposition starting from growth parameters optimized for stoichiometric SnO. The amounts of dopants incorporated into
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::494f38d79f07ac5d995198281bba4b4d
https://doi.org/10.1063/1.5052606
https://doi.org/10.1063/1.5052606
Autor:
Bruno K. Meyer, S. Graubner, Jan Eric Stehr, Detlev Klimm, Detlev M. Hofmann, Sebastian Eisermann, S. Lautenschläger, Detlev Schulz, M. Pinnisch, Andreas Laufer
Publikováno v:
physica status solidi (a). 208:37-41
ZnO crystals grown by the vertical Bridgman technique were comprehensively characterized in view of the impurities and intrinsic defects in the material. It is shown that residual Al is the cause of the residual n-type conductivity and intrinsic defe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccf752960aa644a3343656ffa646aac1
https://doi.org/10.1002/pssa.201026634
https://doi.org/10.1002/pssa.201026634
Publikováno v:
physica status solidi (b). 244:1490-1494
In order to promote growth of ZnO films on ZnO substrates, defects introduced by the surface polishing procedure have to be removed. We investigate the influence of high temperature annealing in O 2 -atmosphere on the structural properties of the ZnO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e76dd152f9eaec26102a4d641411d209
https://doi.org/10.1002/pssb.200675115
https://doi.org/10.1002/pssb.200675115
Autor:
S. Graubner, S. Lautenschläger, Bruno K. Meyer, Shengqiang Zhou, Kay Potzger, Andreas Laufer, T. Leichtweiss, N. Volbers
Publikováno v:
Journal of Applied Physics 103(2008), 123106
As-doping of zinc oxide has been approached by ion implantation and chemical vapor deposition. The effect of thermal annealing on the implanted samples has been investigated by using secondary ion mass spectrometry and Rutherford backscattering∕cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::533c2206da593914fa7236fd227c06b5
https://www.hzdr.de/publications/Publ-11648-1
https://www.hzdr.de/publications/Publ-11648-1
Autor:
S. Lautenschläger, N. Volbers, Jürgen Bläsing, Bruno K. Meyer, S. Graubner, Alois Krost, Juergen Christen, Frank Bertram, Joachim Sann, F. Eylert, Christian Neumann
Publikováno v:
SPIE Proceedings.
We report on the hetero- and homoepitaxial growth of ZnO thin films by the chemical vapor deposition technique. We compare the results obtained on sapphire substrates, on GaN-templates on sapphire substrates and on silicon (111) substrates. Even unde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7556a0550d07ca06e9122f7956318dcd
https://doi.org/10.1117/12.713685
https://doi.org/10.1117/12.713685
Autor:
Bruno K. Meyer, N. Volbers, Christian Neumann, Jürgen Bläsing, S. Graubner, S. Lautenschläger, Alois Krost
Publikováno v:
MRS Proceedings. 957
For the homoepitaxial growth of ZnO it is inevitable to obtain a regular crystalline single crystal surface prior to growth. Commercially available, hydrothermally grown ZnO single crystals show amorphous surfaces due to mechanical cutting and polish
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::440c470e9571ca305b25c8ccdb651fec
https://doi.org/10.1557/proc-0957-k07-31
https://doi.org/10.1557/proc-0957-k07-31
Akademický článek
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Publikováno v:
MRS Proceedings. 891
The shallow donor impurities in ZnO with binding energies between 46 and 56 meV have been studied in great detail in the recent years. They give rise to neutral donor bound exciton recombinations with the A- and B-valence bands, show rotator states a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0303b9e227f64c1c2c92124d733f235d
https://doi.org/10.1557/proc-0891-ee08-02
https://doi.org/10.1557/proc-0891-ee08-02
Autor:
S. Lautenschläger, Bruno K. Meyer, N. Volbers, Frank Bertram, Jürgen Bläsing, Alois Krost, Joachim Sann, Christian Neumann, Jürgen Christen, S. Graubner
Publikováno v:
physica status solidi (b). 244:1431-1431
We report on the homoepitaxial growth of ZnO thin films by chemical vapor deposition techniques. The preparation of the ZnO substrates after mechanical polishing employed a high temperature annealing step which produced atomically flat surfaces and r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b26693730892544315bed088ff58395
https://doi.org/10.1002/pssb.200790004
https://doi.org/10.1002/pssb.200790004
Publikováno v:
Applied Physics Letters. 90:042103
The authors investigate the influence of a high temperature annealing in O2 atmosphere on the structural properties of ZnO substrates. Only at temperatures above 1100°C are atomic step heights and terraces seen by atomic force microscopy. The struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20af9d0c6bc26bb3c595f0af3d55ab09
https://doi.org/10.1063/1.2434170
https://doi.org/10.1063/1.2434170