Zobrazeno 1 - 10
of 29
pro vyhledávání: '"S. Goncalves-Conto"'
Publikováno v:
Thin Solid Films. 352:189-194
In order to improve the thermal stability of organic light emitting diodes (OLED), films made of classical hole transporters (TPD and NPB) and of new blue emitters (based on carbazole dimers) have been deposited on bare ITO substrates, and on ITO gra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9509b703a08813f30e5790a90cc0cb85
https://doi.org/10.1016/s0040-6090(99)00322-3
https://doi.org/10.1016/s0040-6090(99)00322-3
Publikováno v:
Physical Review B. 55:7213-7221
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fa09c6be6163517e81964d442dc94a0
https://doi.org/10.1103/physrevb.55.7213
https://doi.org/10.1103/physrevb.55.7213
Publikováno v:
Applied Surface Science. :204-212
The formation of epitaxially stabilized (pseudomorphic) Fe and Co silicides on Si(111) is reviewed. We show that, apart from the α-FeSi2 phase, which is also stable in bulk form at high temperatures, none of the pseudomorphic phases is ever likely t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0441e65b6be46f440a185dcbf4242ad3
https://doi.org/10.1016/s0169-4332(96)00145-6
https://doi.org/10.1016/s0169-4332(96)00145-6
Publikováno v:
Journal of Applied Physics. 76:7256-7264
High quality epitaxial Co and Fe silicides have been grown by molecular beam epitaxy on Si(111) and Si(001) substrates with film thicknesses ranging between 25 and 8400 A. We used Rutherford backscattering spectrometry channeling techniques to measur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8b836daa67cc65ae723f7a323a941cf
https://doi.org/10.1063/1.358007
https://doi.org/10.1063/1.358007
Publikováno v:
Applied Surface Science. :559-563
The properties of a newly discovered pseudomorphic FeSi/Si(111) phase with the CsCl structure are discussed. Upon annealing the new phase undergoes phase transitions to the stable ϵ-FeSi phase, either in epitaxial or polycrystalline form, depending
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f2c315b257fe4f9aa32ba2a761ef5a1
https://doi.org/10.1016/0169-4332(93)90579-z
https://doi.org/10.1016/0169-4332(93)90579-z
Publikováno v:
Applied Physics Letters. 65:2220-2222
Epitaxial growth of SimGen/Si(001) strained‐layer superlattices by magnetron sputter epitaxy is reported. Films of excellent crystal quality resulted from low‐temperature sputter growth at TS=350 °C, as is evidenced by Rutherford backscattering
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f5f80a9f261b5cff7f2e2c02dc26d6b
https://doi.org/10.1063/1.112766
https://doi.org/10.1063/1.112766
Publikováno v:
MRS Proceedings. 402
The phase-breaking time τφ'. in thin α-FeSi2 films was obtained from the analyses of the lowtemperature magnetoresistance (MR). The films were grown by molecular beam epitaxy (MBE) on Si(111) and capped with epitaxial Si. The MR behavior is interp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df8ef65a783e40bbf81064fcf514fc57
https://doi.org/10.1557/proc-402-379
https://doi.org/10.1557/proc-402-379
Autor:
H. von Känel, Francesca Tavazza, S. Goncalves-Conto, L Miglio, C. Schwarz, Elisabeth Müller, G. Malegori
We report the first synthesis of CoSi in the CsCl structure, as an epitaxial film on Si(111). Experimentally and theoretically we find that the lower stability of this phase, relative to that of FeSi with the same structure, can be understood only by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::203b866a9f43c708dbd7ec341157c01a
http://hdl.handle.net/10281/44069
http://hdl.handle.net/10281/44069
Publikováno v:
MRS Proceedings. 402
A new epitaxial CoSi2 phase has been synthesized on Si(111) by molecular beam epitaxy (MBE) at room temperature (RT). Structural investigations revealed, that films grown onto an ultrathin CoSi2 template crystallize with the CsC1 structure with 50% v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6beed177ef9039552285a4f0e3f1559d
https://doi.org/10.1557/proc-402-493
https://doi.org/10.1557/proc-402-493
Autor:
Franco Marabelli, N. Onda, K. A. Mäder, M. Mendik, S. Goncalves-Conto, L Miglio, G. Malegori, H. von Känel, C. Schwarz
Publikováno v:
Physical review. B, Condensed matter. 50(6)
We analyze the structural, vibrational, and elastic properties of epitaxial novel FeSi films on Si(111) in the CsCl structure by Rutherford-backscattering spectrometry, x-ray-diffraction, infrared transmittance/ reflectance, and Brillouin-light-scatt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::208d4405404958c023591d8ec381922f
https://pubmed.ncbi.nlm.nih.gov/9976633
https://pubmed.ncbi.nlm.nih.gov/9976633