Zobrazeno 1 - 1
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pro vyhledávání: '"S. G. dos Santos Fo."'
Publikováno v:
Journal of The Electrochemical Society. 143:1021-1025
Numerical calculations were used to assess the probable microscopic distribution of the electric field along or close to the actual Si-SiO 3 interface of a metal oxide semiconductor (MOS) capacitor biased into accumulation. Silicon wafers were oxidiz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c8e5c2759e6b0924a7472382aebe225
https://doi.org/10.1149/1.1836575
https://doi.org/10.1149/1.1836575
