Zobrazeno 1 - 6
of 6
pro vyhledávání: '"S. G. Sridhara"'
Publikováno v:
Materials Science and Engineering: B. :187-196
Optical studies provide a great amount of information about acceptors in SiC. The optical recombination of neutral acceptor four particle (bound exciton) complexes has been observed in 4H, 6H, 15R and 3C SiC for Al; 4H, 6H and 3C SiC for Ga; and in 4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a47c36791128b95d062eb05e4175ffd7
https://doi.org/10.1016/s0921-5107(98)00500-5
https://doi.org/10.1016/s0921-5107(98)00500-5
Publikováno v:
Materials Science and Engineering: B. :229-233
We report the values of the absorption coefficient of 4H, 6H and 3C SiC at room temperature, in the range 3900–2968 A. By using the known shift in the bandgap with temperature, we also present estimates of the absorption coefficient of 4H, 6H and 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::234b3caf253b2abe16d41db0e60f3ed6
https://doi.org/10.1016/s0921-5107(98)00508-x
https://doi.org/10.1016/s0921-5107(98)00508-x
Autor:
L. L. Clemen, Wolfgang J. Choyke, Gerhard Pensl, David J. Larkin, H. S. Kong, Robert P. Devaty, T. Troffer, S. G. Sridhara
Publikováno v:
Journal of Applied Physics. 83:7909-7919
Two distinct boron-related centers are known in silicon carbide polytypes, one shallow (ionization energy ∼300 meV) and the other deep (∼650 meV). In this work, 4H SiC homoepitaxial films are intentionally doped with the shallow boron center by c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::454b0a5a0992e402f9528217a89298a6
https://doi.org/10.1063/1.367970
https://doi.org/10.1063/1.367970
Publikováno v:
Journal of Electronic Materials. 24:289-294
We report on the initial investigations of using site-competition epitaxy to control boron incorporation in chemical vapor deposition (CVD) 6H-SiC epilayers. Also reported herein is the detection of hydrogen in boron-doped CVD SiC epilayers and hydro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1a38863bb1d49a0cec48b6143ec9d78
https://doi.org/10.1007/bf02659689
https://doi.org/10.1007/bf02659689
Publikováno v:
Journal of Applied Physics. 84:2963-2964
We report the values of the absorption coefficient of 4H SiC at room temperature, in the wavelength range from 3900 to 3350 A and at 3250 A. By using the known shift in the band gap with temperature, we also present an estimate of the absorption coef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6bc74b3875db0dd9f50673464f65553
https://doi.org/10.1063/1.368403
https://doi.org/10.1063/1.368403
Publikováno v:
Physica Scripta. :9
A brief summary gives the current status of our understanding of the structure of the conduction band edges of SiC. The latest values for the effective masses as derived from theory and verified by experiment are given. Absorption data for higher con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3feb6a7181187a28c5e01f2698b0b013
https://doi.org/10.1238/physica.topical.079a00009
https://doi.org/10.1238/physica.topical.079a00009