Zobrazeno 1 - 9
of 9
pro vyhledávání: '"S. G. Shemardov"'
Publikováno v:
Semiconductors. 54:912-915
After the ion implantation of silicon into sapphire followed by high-temperature annealing, silicon and aluminosilicate precipitates are observed in the surface region of sapphire. X-ray measurements with the mapping of reciprocal space show the pres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0602e427954edaf059ef769794b4be8
https://doi.org/10.1134/s1063782620080060
https://doi.org/10.1134/s1063782620080060
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 11:790-800
Articles devoted to methods for improving the structural quality of epitaxial films, which utilize the high-temperature interaction between hydrogen and silicon as well as solid-phase recrystallization process, are reviewed. A correlation between the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36c2e2774319e644ba622d1454d0804d
https://doi.org/10.1134/s1027451017040176
https://doi.org/10.1134/s1027451017040176
Publikováno v:
Crystallography Reports. 62:597-601
The effect of He+ ion implantation and subsequent annealing on the silicon-on-sapphire microstructure is studied by transmission electron microscopy and X-ray diffraction analysis. It is established that He+ ion implantation leads to the formation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88a73961552a11429bcdea031275b073
https://doi.org/10.1134/s1063774517040058
https://doi.org/10.1134/s1063774517040058
Publikováno v:
Semiconductors. 49:1099-1103
A method for the production of high-quality radiation-resistant silicon-on-sapphire structures through the fabrication of a layer of nanopores in sapphire by helium ion implantation, i.e., by creating charge-carrier recombination centers, is proposed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bc4f1c9d802296347f6c8050b6eb373
https://doi.org/10.1134/s1063782615080023
https://doi.org/10.1134/s1063782615080023
Publikováno v:
Inorganic Materials. 41:239-242
The conditions for vapor-phase growth of thin SiC films on silicon substrates are optimized. The thickness of the grown films varies from 100 A to 10 µm, depending on the deposition conditions. The 3C-SiC films grown under the optimal conditions are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2871a5a049e8f926dd07273d92c83ffa
https://doi.org/10.1007/s10789-005-0116-y
https://doi.org/10.1007/s10789-005-0116-y
Publikováno v:
Semiconductors. 47:298-300
Silicon films on sapphire substrates are grown via recrystallization from the silicon-sapphire interface. An amorphous layer is formed using ion implantation with silicon ion energies of 90–150 keV. An X-ray rocking curve is used to estimate the cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dc74fa4cca8081c4b0a04fad1cf7779
https://doi.org/10.1134/s1063782613020036
https://doi.org/10.1134/s1063782613020036
Publikováno v:
Technical Physics. 47:1333-1336
Experimental concentration profiles of As ions in a silicon substrate at temperatures of 20, 600, and 1050°C and ion current of 40 µA/cm2, as well as at 1050°C and 10 µA/cm2, are presented. On the basis of our and previously published experimenta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51ae66c757f7e6903c05c67a00f02c56
https://doi.org/10.1134/1.1514818
https://doi.org/10.1134/1.1514818
Publikováno v:
Semiconductors. 44:1386-1388
The use of the process of solid-phase recrystallization reduces to a great extent the number of defects in the silicon layer. An amorphous layer was formed by implantation of silicon ions. The crystalline quality of the SOS structures has been assess
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4810700856480af398fbefedb9e9c445
https://doi.org/10.1134/s1063782610100258
https://doi.org/10.1134/s1063782610100258
Publikováno v:
Semiconductors. 43:599-601
Silicon films with a low defect concentration have been formed on a sapphire substrate using the process of solid-phase recrystallization. The method of X-ray rocking curves has been used in order to assess the crystalline quality of the silicon-on-s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5c8ad787ce803ca37b8b2bb27e160bb
https://doi.org/10.1134/s1063782609050108
https://doi.org/10.1134/s1063782609050108