Zobrazeno 1 - 10
of 120
pro vyhledávání: '"S. G. Konnikov"'
Autor:
Pavel N. Brunkov, I. A. Ermakov, S. G. Konnikov, A. A. Gutkin, N. D. Prasolov, V. A. Solov’ev, Leonid M. Dorogin
Publikováno v:
Semiconductors. 53:2110-2114
It was shown that the nanoindentation treatment of the atomically flat GaAs surface with the tip of atomic-force microscope in contact mode allows to produce small size pits with the depth in the range from a few tenths of nm up to a 1.5 nm. The expe
Publikováno v:
Technical Physics. 64:418-421
The formation of a surface layer with silver and sodium concentration gradients in K8-grade glasses as a result of ion exchange is demonstrated by scanning electron microscopy (SEM) and electron probe X-ray microanalysis. The silver ions enriched lay
Publikováno v:
Crystallography Reports. 63:196-199
The small-angle X-ray scattering in calomel (univalent mercury chloride Hg2Cl2) single crystals at low temperatures has been investigated. Data on the size of superstructural ferroelectric domains have been obtained for the first time. Lang measureme
Publikováno v:
Physics of the Solid State. 58:2331-2334
Quartz plates placed in concrete are used to model the rock blasting procedure. Quartz fragments resulted from blasting are studied by small-angle X-ray scattering. Obtained grains in the quartz fragments are approximately 200–220 nm in size. The s
Autor:
S. O. Kognovitskii, A V Nashchekin, I. P. Soshnikov, M V Zamoryanskaya, S G Konnikov, M E Gaevski
Publikováno v:
Microscopy of Semiconducting Materials 2001 ISBN: 9781351074629
Microscopy of Semiconducting Materials 2001
Microscopy of Semiconducting Materials 2001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0f7411117f3e5868439290ba1afe535
https://doi.org/10.1201/9781351074629-25
https://doi.org/10.1201/9781351074629-25
Publikováno v:
Technical Physics. 60:1575-1600
Ways to gain and analyze experimental data obtained by X-ray techniques used in material examination are described. Emphasis is on the methods of extended X-ray absorption fine structure, X-ray diffraction, and X-ray low-angle scattering.
Publikováno v:
Semiconductors. 49:1052-1056
By means of the small-angle X-ray-scattering technique, a set of two types of microcrystalline silicon samples produced for use in solar-cell panels is investigated. It is shown that, in the two individual samples belonging to different types, the he
Autor:
S. G. Konnikov, Demid A. Kirilenko, A. A. Sitnikova, A.E. Aleksenskiy, A.Ya. Vul, A. T. Dideykin
Publikováno v:
Micron
Ultrathin graphene films find their use as advantageous support for nano- and biomaterials investigations. Thin film causes a very slight deterioration to measured signals, thus providing more details of the object's structure at nanoscale. The ultim
Autor:
A. A. Lazarenko, Pavel N. Brunkov, S. G. Konnikov, A. Yu. Egorov, E. V. Pirogov, Demid A. Kirilenko, M. V. Baidakova, M. S. Sobolev, Ekaterina V. Nikitina
Publikováno v:
Semiconductors. 48:1600-1604
Advances in the production technology of multiperiod nanoheterostructures of quantum-cascade lasers with 60 cascades by molecular-beam epitaxy (MBE) on an industrial multiple-substrate MBE machine are discussed. The results obtained in studying the n
Publikováno v:
Physics of the Solid State. 56:2343-2347
Two samples of detonation-synthesized ultradispersed diamond have been studied using X-ray diffractometry and small-angle X-ray scattering. It has been shown based on the X-ray diffractometry data that two samples contain regions with both the diamon