Zobrazeno 1 - 4
of 4
pro vyhledávání: '"S. G. Dremluzhenko"'
Autor:
O. V. Galochkin, S. G. Dremluzhenko, Z. I. Zakharuk, V. M. Sklyarchuk, V. Z. Tsaliy, A. A. Asheulov
Publikováno v:
Фізика і хімія твердого тіла, Vol 17, Iss 1, Pp 129-133 (2017)
The perfect single crystals of mercury-indium telluride were grown by the modified method of zone melting. The differential thermal analysis (DTA) and X-ray structure analysis are performed.
Externí odkaz:
https://doaj.org/article/185f1c30f7ab4fe793ded5254925dcfc
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 2-3, Pp 3-7 (2016)
Ge, Si, InGaAs, GaInAsP photodiodes are used as optical radiation receivers and function in a spectral range of transparency of quartz fiberglass. For the optical systems operated in the increased radioactivity the photodetectors’ application on In
Autor:
S. E. Ostapov, Yu. P. Stetsko, S. G. Dremluzhenko, A. I. Rarenko, L. I. Konopatseva, S. M. Kulikovskaya, V. N. Strebezhev
Publikováno v:
SPIE Proceedings.
Calculation and manufacturing methods of (lambda) equals 2,5-30 micrometers range interference IR-filters with deep suppression of short-wave obstacles based on the CdSb semiconductor monocrystal substrates with intrinsic absorption edge at (lambda)
Autor:
J. I. Vyklyuk, S. G. Dremluzhenko, V. G. Deibuk, S. M. Nichyi, Ilary M. Rarenko, Z. I. Zakharuk
Publikováno v:
SPIE Proceedings.
InSb1-xBix solid solutions monocrystal structures with (Delta) Eg80K equals 0,12eV were obtained using the modified Czochralski, zone and laser melting methods. A band structure of semiconductor InSb1-xBix substitution solid solution is calculated by