Zobrazeno 1 - 10
of 13
pro vyhledávání: '"S. G. Bunchuk"'
Autor:
S. G. Bunchuk, A. G. Golenkov, M.V. Vuichyk, I. O. Lysiuk, V. P. Reva, F. F. Sizov, A.V. Shevchik-Shekera, S. V. Korinets, M.Yu. Kovbasa, S. E. Dukhnin
Publikováno v:
Semiconductor Physics, Quantum Electronics and Optoelectronics. 24:90-99
Room temperature linear arrays (up to 160 detectors in array) from silicon metal- oxide-semiconductor field-effect transistors (Si-MOSFETs) have been designed for sub- THz (radiation frequency 140 GHz) close to real-time direct detection operation sc
Publikováno v:
Успехи физики металлов, Vol 5, Iss 1, Pp 37-50 (2004)
In a given basic research, experimental investigations of the magnetic properties of deformed metals and semiconductors are analysed. The anomalous diamagnetism and nonresonant signal of the microwave response of samples at issue are explained by the
Externí odkaz:
https://doaj.org/article/3730385ddfda4f47990458456ac48550
Publikováno v:
Успехи физики металлов, Vol 2, Iss 2, Pp 131-149 (2001)
In a given paper, it is shown that, after the deformation by squeezing of single crystals of molybdenum and zinc, a sharp increase of magnetic susceptibility strongly depending on the surface state before deforming is observed. This phenomenon can be
Externí odkaz:
https://doaj.org/article/8b27c049b14244b7bbdfcc34bddd7e04
Autor:
F. F. Sizov, S. G. Bunchuk, O. G. Golenkov, S. V. Korinets, V. P. Reva, Dmytro B. But, J. V. Gumenjuk-Sichevska, N. V. Sakhno
Publikováno v:
Semiconductors. 46:678-683
The nonresonance response of silicon metal-oxide-semiconductor field-effect transistors (Si-MOSFETs) with a long channel (1–20 μm) to radiation in the frequency range 43–135 GHz is studied. The transistors are fabricated by the standard CMOS tec
Autor:
A. V. Brodovoi, S. G. Bunchuk
Publikováno v:
Technical Physics. 56:1056-1059
The effect of long-term exposure of titanium nickelide in a dc nonuniform magnetic field on the phase transformation in it is studied. The magnetic field is shown to change the phase composition of an equiatomic Ti-Ni alloy and to substantially chang
Autor:
A. V. Brodovoi, S. G. Bunchuk
Publikováno v:
Inorganic Materials: Applied Research. 5:413-415
The effect of electric and magnetic field exposure of silicon single crystals on their surface structure is investigated. It is demonstrated that long magnetic and electric field exposure of Si samples leads to the formation or healing of surface def
Publikováno v:
Semiconductor Science and Technology. 21:358-363
Investigations of electrical properties of long-wavelength infrared (LWIR) mercury cadmium telluride (MCT) arrays exposed to gamma-radiation have been performed. Resistance-area product characteristics of LWIR n{+}-p photodiodes have been investigate
Publikováno v:
Physics of the Solid State. 54:1135-1137
The optical transmission spectra of Hg1 − x Cd x Te epitaxial layers with a magnetization gradient have been investigated experimentally. The magnetization gradient has been artificially created by the opposite arrangement of the poles of the magne
Publikováno v:
Physics of the Solid State. 53:561-563
The optical transmission spectra of epitaxial Hg1 − xCdxTe films with a gradient of the band gap have been studied experimentally. The possibility of transforming the spectra after exposure of the samples to a homogeneous magnetic field has been de
Publikováno v:
SPIE Proceedings.
In the present work indium antimonide crystals doped by cadmium and tellurium in equiatomic quantities have been studied. It was shown that (InSb) 1-x (CdTe) x solid solutions with the mole concentration x ≤ 0.05 arises. Two maxima at x = 0.0025 an