Zobrazeno 1 - 10
of 34
pro vyhledávání: '"S. Gökden"'
Autor:
S. Gökden
Publikováno v:
The European Physical Journal Applied Physics. 38:141-145
Gökden, Sibel (Balikesir Author)
The effects of conventional scattering mechanisms on the electron Hall mobility in GaN are calculated and analysed. The ratios of the transport to quantum scattering time are also calculated and the ratio is eva
The effects of conventional scattering mechanisms on the electron Hall mobility in GaN are calculated and analysed. The ratios of the transport to quantum scattering time are also calculated and the ratio is eva
Autor:
S. Gökden
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 23:198-203
Gökden, Sibel (Balikesir Author)
We present the effect of hot-phonon production on the high-field drift velocity in the steady state in GaN/AlGaN heterostructures. The results are compared with a model taking into account the effect of hot phon
We present the effect of hot-phonon production on the high-field drift velocity in the steady state in GaN/AlGaN heterostructures. The results are compared with a model taking into account the effect of hot phon
Autor:
S. Gökden
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 23:114-120
Gökden, Sibel (Balikesir Author)
The influence of interface roughness on the mobility of two-dimensional electrons in GaN/AlGaN HEMT structures are theoretically investigated in light of the measured mobility. Experimental mobility of 2912 cm(2
The influence of interface roughness on the mobility of two-dimensional electrons in GaN/AlGaN HEMT structures are theoretically investigated in light of the measured mobility. Experimental mobility of 2912 cm(2
Akademický článek
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Publikováno v:
Thin Solid Films
Current-transport mechanisms were investigated in Schottky contacts on AlInN/AlN/GaN single channel (SC) and AlInN/AlN/GaN/AlN/GaN double channel (DC) heterostructures. A simple model was adapted to the current-transport mechanisms in DC heterostruct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27fb16f3bcf9ccf14d7e91fac17ab784
https://aperta.ulakbim.gov.tr/record/15413
https://aperta.ulakbim.gov.tr/record/15413
Publikováno v:
The European Physical Journal Applied Physics
Tülek, Remziye (Balikesir Author)
In this work, we investigated the hot-electron dynamics of AlGaN/GaN HEMT structures grown by MOCVD on sapphire and SiC substrates at 80 K. High-speed current-voltage measurements and Hall measurements over the
In this work, we investigated the hot-electron dynamics of AlGaN/GaN HEMT structures grown by MOCVD on sapphire and SiC substrates at 80 K. High-speed current-voltage measurements and Hall measurements over the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ec23f5404b258c6a18d73cff9ca18eab
https://avesis.gazi.edu.tr/publication/details/67cef2ee-1e42-4691-a58e-4078990e74c0/oai
https://avesis.gazi.edu.tr/publication/details/67cef2ee-1e42-4691-a58e-4078990e74c0/oai
Autor:
Sefer Bora Lisesivdin, Remziye Tülek, Jacob H. Leach, J. Q. Xie, S. Gökden, Hadis Morkoç, Ümit Özgür, A. Teke, Ekmel Ozbay, Qian Fan
Publikováno v:
Semiconductor Science and Technology
Gökden, Sibel (Balikesir Author)
The scattering mechanisms limiting the carrier mobility in AlInN/AlN/InGaN/GaN two-dimensional electron gas (2DEG) heterostructures were investigated and compared with devices without InGaN channel. Although it
The scattering mechanisms limiting the carrier mobility in AlInN/AlN/InGaN/GaN two-dimensional electron gas (2DEG) heterostructures were investigated and compared with devices without InGaN channel. Although it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68b2451d1e03bf04f48b96f074fb49e5
https://hdl.handle.net/20.500.12462/6990
https://hdl.handle.net/20.500.12462/6990
Autor:
Mustafa Öztürk, Engin Arslan, Aykut Ilgaz, Remziye Tülek, Ekmel Ozbay, A. Teke, S. Gökden, Mehmet Kasap, Süleyman Özçelik
Publikováno v:
Journal of Applied Physics
Tülek, Remziye (Balikesir Author)
The transport properties of high mobility AlGaN/AlN/GaN and high sheet electron density AlInN/AlN/GaN two-dimensional electron gas (2DEG) heterostructures were studied. The samples were grown by metal-organic c
The transport properties of high mobility AlGaN/AlN/GaN and high sheet electron density AlInN/AlN/GaN two-dimensional electron gas (2DEG) heterostructures were studied. The samples were grown by metal-organic c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b5cd2a0bd968e521e5da899083362538
https://hdl.handle.net/11693/22695
https://hdl.handle.net/11693/22695
Publikováno v:
Semiconductor Science and Technology
Gökden, Sibel (Balikesir Author)
Hall effect measurements on undoped Al0.25Ga0.75N/GaN heterostructures grown by a metalorganic chemical vapour deposition (MOCVD) technique have been carried out as a function of temperature (20-350 K) and magne
Hall effect measurements on undoped Al0.25Ga0.75N/GaN heterostructures grown by a metalorganic chemical vapour deposition (MOCVD) technique have been carried out as a function of temperature (20-350 K) and magne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd25bf4836873a5902e6061eb6c1c228
https://hdl.handle.net/11693/23476
https://hdl.handle.net/11693/23476
Gökden,Sibel (Balikesir Author)
We present the results of our experimental and theoretical studies concerning the temperature dependence of electron mobility in a two-dimensional electron gas (2DEG) confined at the GaN/AlGaN interface. Experime
We present the results of our experimental and theoretical studies concerning the temperature dependence of electron mobility in a two-dimensional electron gas (2DEG) confined at the GaN/AlGaN interface. Experime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::97385a447b421fc355e012e828834227
https://hdl.handle.net/20.500.12462/7509
https://hdl.handle.net/20.500.12462/7509