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Near infrared absorption of Si nanoparticles embedded in silica films

Autor: L. Siozade, S. Fisson, Bruno Gallas, I. Stenger, J. Rivory, G. Vuye

Publikováno v: Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2007, 601 (14), pp.2912-2916. ⟨10.1016/j.susc.2007.04.244⟩

International audience; The absorption coefficient of Si nanoparticles embedded in a silica matrix obtained through thermal annealing at 1000 degrees C of SiO thin films has been determined by a combination of ellipsometry and photothermal deflection

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::352371b5d000ce83966ffbe1cf911889
https://doi.org/10.1016/j.susc.2007.04.244

Determination of pore size distribution in thin organized mesoporous silica films by spectroscopic ellipsometry in the visible and infrared range

Autor: A. Bourgeois, B. Demarets, Josette Rivory, Clément Sanchez, David Grosso, A. Brunet Bruneau, S. Fisson, F. Cagnol

Publikováno v: Thin Solid Films
Thin Solid Films, 2004, 447-448, pp.46. ⟨10.1016/j.tsf.2003.09.020⟩

Spectroscopic ellipsometry is a non-destructive technique, well adapted to the determination of pore volume fraction, pore size distribution and accessible surface area of porous thin films; it is particularly attractive for low-k films. These quanti

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c36fa886286fe7cef05e0ac8fe67816a
https://doi.org/10.1016/j.tsf.2003.09.020

In situ control of SiOx composition by spectroscopic ellipsometry

Autor: S. Fisson, G. Vuye, C.-C. Kao, Josette Rivory, Bruno Gallas

Publikováno v: Materials Science and Engineering: B. 105:205-208

This paper presents a study on the growth of SiO x thin films deposited by electron gun evaporation of SiO under O 2 reactive atmosphere. The composition x of the films was determined by spectroscopic ellipsometry using the random bonding model (RBM)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e963ff311bf9360a1a577d54dbe6dded
https://doi.org/10.1016/j.mseb.2003.08.046

Ellipsometric investigation of the Si/SiO2 interface formation for application to highly reflective dielectric mirrors

Autor: Bruno Gallas, S. Fisson, A. Brunet-Bruneau, G. Vuye, Josette Rivory

Publikováno v: Thin Solid Films
Thin Solid Films, Elsevier, 2000, 377-378, pp.62. ⟨10.1016/S0040-6090(00)01383-3⟩
Thin Solid Films, 2000, 377-378, pp.62. ⟨10.1016/S0040-6090(00)01383-3⟩

We present a study of the Si/SiO 2 interface formation during the growth of Si on SiO 2 using in situ ellipsometry measurements performed at one wavelength (X = 0.4 μm). Variable angle X-ray photoelectron spectroscopy (XPS) is also used to confirm t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23c60f6cf5d53b1909728e9c8a59ff0f
https://doi.org/10.1016/s0040-6090(00)01383-3