Zobrazeno 1 - 5
of 5
pro vyhledávání: '"S. F. Galata"'
Autor:
K. Baskourelos, O. Tsilipakos, T. Stefański, S. F. Galata, E. N. Economou, M. Kafesaki, K. L. Tsakmakidis
Publikováno v:
Physical Review Research, Vol 4, Iss 3, p L032011 (2022)
Τhe incumbent technology for bringing light to the nanoscale, the near-field scanning optical microscope, has notoriously small throughput efficiencies of the order of 10^{4} −10^{5}, or less. We report on a broadband, topological, unidirectionall
Externí odkaz:
https://doaj.org/article/3b5798d4f13e4fd997e318a32f020bbb
Autor:
Y. Panayiotatos, Polychronis Tsipas, E. K. Evangelou, S. F. Galata, G. Mavrou, Jin Won Seo, A. Sotiropoulos, A. Dimoulas, Ch. Dieker
Publikováno v:
Microelectronic Engineering. 84:2324-2327
In this work, we investigate La2O3 as a gate dielectric candidate for Ge devices, using metal-insulator-semiconductor (MIS) structures. When the deposition temperature increases, the electrical characteristics improve with regard to dispersion in acc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::acffc57625b8586822221d4bc22b1a3d
https://doi.org/10.1016/j.mee.2007.04.036
https://doi.org/10.1016/j.mee.2007.04.036
Autor:
E. K. Evangelou, A. Sotiropoulos, Y. Panayiotatos, Sabina Spiga, Thierry Conard, Michel Houssa, S. Ferrari, Marc Heyns, David P. Brunco, Athanasios Dimoulas, Jin Won Seo, Matty Caymax, Marco Fanciulli, Ch. Dieker, S. F. Galata
Publikováno v:
Thin solid films
515 (2007): 6337–6343. doi:10.1016/j.tsf.2006.11.129
info:cnr-pdr/source/autori:Dimoulas, A; Brunco, DP; Ferrari, S; Seo, JW; Panayiotatos, Y; Sotiropoulos, A; Conard, T; Caymax, M; Spiga, S; Fanciulli, M; Dieker, C; Evangelou, EK; Galata, S; Houssa, M; Heyns, MM/titolo:Interface engineering for Ge metal-oxide-semiconductor devices/doi:10.1016%2Fj.tsf.2006.11.129/rivista:Thin solid films (Print)/anno:2007/pagina_da:6337/pagina_a:6343/intervallo_pagine:6337–6343/volume:515
515 (2007): 6337–6343. doi:10.1016/j.tsf.2006.11.129
info:cnr-pdr/source/autori:Dimoulas, A; Brunco, DP; Ferrari, S; Seo, JW; Panayiotatos, Y; Sotiropoulos, A; Conard, T; Caymax, M; Spiga, S; Fanciulli, M; Dieker, C; Evangelou, EK; Galata, S; Houssa, M; Heyns, MM/titolo:Interface engineering for Ge metal-oxide-semiconductor devices/doi:10.1016%2Fj.tsf.2006.11.129/rivista:Thin solid films (Print)/anno:2007/pagina_da:6337/pagina_a:6343/intervallo_pagine:6337–6343/volume:515
High mobility semiconductors such as Ge with high-k gates may be required to enhance performance of future devices. One of the biggest challenges for the development of a Ge metal-oxide-semiconductor (MOS) technology is to find appropriate passivatin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::604fa5e8df095ce5eef3803cd01dc0fe
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29:01AB06
The authors report the current instabilities in rare-earth oxides-HfO(2) gate stacks grown on Ge (001) based metal-oxide-semiconductor devices under constant voltage stress (CVS). The devices have been subjected to CVS and show relaxation effect and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::78f75091352be67dc121a59220313d6a
https://doi.org/10.1116/1.3532946
https://doi.org/10.1116/1.3532946
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 27:246
In this work the authors investigate La2O3 and ZrO2/La2O3 high-k gate dielectrics on p-type Ge metal-insulator-semiconductor capacitors. La2O3 on Ge exhibits good electrical properties in terms of interface states density, but it may not be scalable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc59d823b74cc487b958c25baae7cc20
https://doi.org/10.1116/1.3043533
https://doi.org/10.1116/1.3043533