Zobrazeno 1 - 10
of 12
pro vyhledávání: '"S. F. Chichibu"'
Publikováno v:
APL Materials, Vol 7, Iss 7, Pp 071116-071116-6 (2019)
The internal quantum efficiency (IQE) of radiation for bulk CH3NH3PbBr3 crystals was quantified by using omnidirectional photoluminescence spectroscopy. The angle-resolved photoluminescence revealed that the emission with photon energies higher than
Externí odkaz:
https://doaj.org/article/3a4a3642c19e4c308e7dae8b9f861517
Autor:
S. F. Chichibu, K. Nagata, M. Oya, T. Kasuya, K. Okuno, H. Ishiguro, Y. Saito, T. Takeuchi, K. Shima
Publikováno v:
Applied Physics Letters. 122
Degradation mechanisms of 275-nm-band AlxGa1-xN multiple quantum well deep-ultraviolet light-emitting diodes fabricated on a (0001) sapphire substrate were investigated under hard operation conditions with the current of 350 mA and the junction tempe
Autor:
L. Y. Li, K. Shima, M. Yamanaka, T. Egawa, T. Takeuchi, M. Miyoshi, S. Ishibashi, A. Uedono, S. F. Chichibu
Publikováno v:
Journal of Applied Physics. 132:163102
Lattice-matched Al1− xIn xN / GaN heterostructures with InN mole fraction ( x) of 0.18 have attracted considerable interest for use in GaN-based optoelectronic devices. Because the light emission efficiency ([Formula: see text]) of Al1− xIn xN al
Publikováno v:
Applied Physics Letters. 120:231904
Hexagonal (h) BN is a semiconductor that crystallizes in layers of a two-dimensional honeycomb structure. Since hBN exhibits high quantum efficiency (QE) near-band edge emission at around 5.8 eV in spite of the indirect bandgap, hBN has a potential f
Autor:
Takashi Yamamoto, S. Ando, Hachiro Nakanishi, M. Nakamura, S. F. Chichibu, J. Ishizuki, T. Deguchi
Publikováno v:
Journal of Physics and Chemistry of Solids. 64:1855-1858
A less-hazardous and low cost selenization method for the preparation of CuInSe 2 films was demonstrated using diethylselenide [(C 2 H 5 ) 2 Se:DESe] as a Se source alternative to H 2 Se. By using N 2 as a carrier gas, potential H 2 leakage risk was
Publikováno v:
Journal of Physics and Chemistry of Solids. 64:1787-1790
A Schottky contact to p-type CuGaS 2 that showed the highest rectification ratio of approximately 500 ever reported was realized using a Cu electrode on a HF/HNO 3 -treated surface, as well as an excellent Au ohmic contact on a HF-etched surface. The
Autor:
S. P. DenBaars, Shuji Nakamura, Akira Uedono, Michael Iza, S. F. Chichibu, Hitoshi Sato, Takeyoshi Onuma, Hirokuni Asamizu, John F. Kaeding
Publikováno v:
Applied Physics Letters. 96:091913
The influences of enhanced stacking fault (SF) formation, which is peculiar to nitrogen-(N-) polarity growth and lattice-mismatched semipolar heteroepitaxy, on the electrical properties of (101¯1¯) Mg-doped GaN (GaN:Mg) epilayers were investigated.
Autor:
P. Fini, S. P. DenBaars, S. F. Chichibu, James S. Speck, T. Koyama, Takeyoshi Onuma, Shuji Nakamura, Umesh Mishra, Benjamin A. Haskell, Melvin McLaurin, Arpan Chakraborty, Takayuki Sota, Sarah L. Keller
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25:1524
Different from the case for polar (0001) InxGa1−xN multiple quantum wells (MQWs), the effective radiative lifetimes (τR,eff) at 8K of violet (V: 3.15eV), purple (P: 3.00eV), and blue (B: 2.83eV) emission peaks in nonpolar (11¯00) InxGa1−xN∕Ga
Autor:
James S. Speck, Sarah L. Keller, S. F. Chichibu, Takeyoshi Onuma, Umesh Mishra, Shuji Nakamura, S. P. DenBaars, T. Sota
Publikováno v:
Applied Physics Letters. 88:111912
Recombination dynamics of the 268nm photoluminescence (PL) peak in a quaternary Al0.53In0.11Ga0.36N∕Al0.58In0.02Ga0.40N multiple quantum well (MQW) grown on relaxed AlGaN templates were studied. Although the polarization field in the compressively
Autor:
S. F. Chichibu, James S. Speck, Shuji Nakamura, S. P. DenBaars, Sarah L. Keller, Takayuki Sota, Takeyoshi Onuma, Arpan Chakraborty, Umesh Mishra, Benjamin A. Haskell
Publikováno v:
Applied Physics Letters. 86:151918
Beneficial effects of the localized excitons were confirmed in nonpolar (112¯0) InxGa1−xN multiple quantum wells (QWs) grown on GaN templates prepared by lateral epitaxial overgrowth. Due to the absence of the polarization fields normal to the QW